是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 0.7 | 雪崩能效等级(Eas): | 31 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 11 A |
最大漏极电流 (ID): | 11 A | 最大漏源导通电阻: | 0.0145 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 55 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDP8880_08 | FAIRCHILD |
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N-Channel PowerTrench㈢ MOSFET | |
FDP8880_NL | FAIRCHILD |
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Power Field-Effect Transistor, 11A I(D), 30V, 0.0145ohm, 1-Element, N-Channel, Silicon, Me | |
FDP8896 | FAIRCHILD |
获取价格 |
N-Channel PowerTrench MOSFET 30V, 92A, 5.9mз | |
FDP8896 | ONSEMI |
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30V N沟道PowerTrench® MOSFET | |
FDP8896_08 | FAIRCHILD |
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N-Channel PowerTrench㈢ MOSFET 30V, 92A, 5.9mヘ | |
FDP8896_F085 | FAIRCHILD |
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Power Field-Effect Transistor, 16A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Met | |
FDP8D5N10C | ONSEMI |
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N 沟道,PowerTrench® MOSFET,屏蔽门极,100V,76A,8.5mΩ | |
FDP8D5N10C | UMW |
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种类:N-Channel;漏源电压(Vdss):100V;持续漏极电流(Id)(在25°C | |
FDP8G30 | ADAM-TECH |
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DIP Connector, 8 Contact(s), 2 Row(s), Male, 0.1 inch Pitch, IDC Terminal, Black Insulator | |
FDP8GGY | ADAM-TECH |
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DIP Connector, 8 Contact(s), 2 Row(s), Male, 0.1 inch Pitch, IDC Terminal, Gray Insulator, |