Datasheet > FDP8870_10

FDP8870_10

更新时间： 2024-02-15 09:05:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
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描述
N-Channel PowerTrenchÂ® MOSFET 30V, 156A, 4.1mW

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FDP8870_10 数据手册

July 2010

FDP8870_F085

N-Channel PowerTrench MOSFET

30V, 156A, 4.1mΩ

General Description

Features

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM

controllers. It has been optimized for low gate charge, low

•

= 4.1mΩ, V = 10V, I = 35A

GS D

DS(ON)

= 4.6mΩ, V = 4.5V, I = 35A

DS(ON)

High performance trench technology for extremely low

and fast switching speed.

DS(ON)

•

Low gate charge

•

ꢀ

High power and current handling capability

Qualified to AEC Q101

Applications

•

DC/DC converters

RoHS Compliant

(FLANGE)

DRAIN

SOURCE

DRAIN

GATE

TO-220AB

FDP SERIES

MOSFET Maximum Ratings T = 25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

DSS

Drain Current

156

147

Continuous (T = 25 C, V = 10V) (Note 1)

Continuous (T = 25 C, V = 4.5V) (Note 1)

C GS

Continuous (T

= 25 C, V = 10V, with R = 62 C/W)

θJA

amb

Pulsed

Figure 4

300

Single Pulse Avalanche Energy (Note 2)

Power dissipation

160

Derate above 25 C

1.07

W/ C

T , T

Operating and Storage Temperature

-55 to 175

STG

Thermal Characteristics

Thermal Resistance Junction to Case TO-220

Thermal Resistance Junction to Ambient TO-220 ( Note 3)

0.94

C/W

θJC

θJA

C/W

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

N/A

Quantity

FDP8870

FDP8870_F085

TO-220AB

Tube

50 units

FDP8870_F085 Rev.A

12 3 4 5 6 7...10

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