Datasheet > FDC2512_F073

FDC2512_F073

更新时间： 2024-11-18 14:42:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	176K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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技术参数
数据手册

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FDC2512_F073 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	配置：	Single
最大漏极电流 (Abs) (ID)：	1.4 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	1.6 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

FDC2512_F073 数据手册

February 2002

FDC2512

150V N-Channel PowerTrench^MOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low R_DS(ON)and fast switching speed.

• 1.4 A, 150 V.

R_DS(ON)= 425 mΩ @ V_GS= 10 V

R_DS(ON)= 475 mΩ @ V_GS= 6 V

•

High performance trench technology for extremely

low R_DS(ON)

Applications

•

Low gate charge (8nC typ)

• DC/DC converter

High power and current handling capability

Fast switching speed

SuperSOT ^TM-6

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

150

V_GSS

I_D

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

1.4

1.6

0.8

(Note 1a)

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

T_J, T_stg

Operating and Storage Junction Temperature Range

−55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

R_θJA

R_θJC

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

.252

FDC2512

7’’

8mm

3000 units

FDC2512 Rev B3 (W)

2002 Fairchild Semiconductor Corporation

12 3 4 5

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