Datasheet > FDC2AT10S65

FDC2AT10S65

更新时间： 2024-04-09 19:00:01

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
5页	447K
描述
Single TO-220F-2

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FDC2AT10S65 数据手册

www.fujielectric.com/products/semiconductor/

SiC-SBD

FDC2AT10S65

SiC Schottky Barrier Diode

Features

Internal circuit chart

• New 2nd Generation Technology

• Low forward voltage

• High surge current capability

• High speed switching

• Pb-free lead terminal; RoHS compliant

• Halogen-free molding compound

Cathode ①

Anode ②

①

②

Applications

• Switch mode power supply

• Uninterruptible power supply

• PV Power Conditioner

TO-220F-2

Maximum Ratings and Characteristics

Absolute Maximum Ratings at Tvj = 25°C(unless otherwise speciﬁed)

Parameter

Symbol

Value

650

Unit

Remarks

Repetitive peak reverse voltage

Continuous forward current

RRM

< 115 °C, D = 1

= 25 °C, t

= 150 °C, t

= 25 °C, t = 10 ms

= 10 ms

Surge non-repetitive forward current

(half sine wave)

FSM

61.5

33.6

18.9

= 10 ms

A²s

I²t value

∫I²dt

= 150 °C, t

Max. Power Dissipation

Operating junction temperature

Storage temperature

tot

= 25 °C

Tvj

175

°C

stg

-55 ~ +175

°C

Isolation Voltage

iso

kVrms

t = 60sec, f = 60Hz

Electrical Characteristics at Tvj = 25°C(unless otherwise speciﬁed)

Static characteristics

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

DC blocking voltage

= 1 mA

650

= 10A, Tvj = 25 °C

1.10

1.30

1.48

0.4

1.50

1.99

Forward voltage

Reverse current

= 10 A, Tvj = 150 °C

= 650 V, Tvj = 25 °C

= 650 V, Tvj = 150 °C

μA

200

Dynamic characteristics

Parameter

Symbol

Conditions

Min.

Typ.

9.5

Max.

Unit

= 400 V, I = 10 A,

Total Capacitive Charge

Total Capacitance

-di/dt = 200 A/μs,

vj = 150 °C

= 400 V, f = 1 MHz

Thermal Resistance

Parameter

Symbol

Min.

Typ.

Max.

Unit

°C/W

Thermal Resistance, Junction –Ambient

Thermal Resistance, Junction –Case

th(j-a)

Rth(j-c)

2.80

4441a

2022/6

12 3 4 5

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