Datasheet > FDC2612_F095

FDC2612_F095

更新时间： 2024-11-18 20:11:15

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	197K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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技术参数
数据手册

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FDC2612_F095 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
配置：	Single	最大漏极电流 (Abs) (ID)：	1.1 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	1.6 W	子类别：	FET General Purpose Power
表面贴装：	YES	Base Number Matches：	1

FDC2612_F095 数据手册

February 2002

FDC2612

200V N-Channel PowerTrench^MOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low R_DS(ON)and fast switching speed.

• 1.1 A, 200 V.

R_DS(ON)= 725 mΩ @ V_GS= 10 V

• High performance trench technology for extremely

low R_DS(ON)

• High power and current handling capability

• Fast switching speed

Applications

• DC/DC converter

• Low gate charge (8nC typical)

SuperSOT ^TM-6

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

200

V_GSS

I_D

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

1.1

1.6

0.8

(Note 1a)

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

T_J, T_STG

Operating and Storage Junction Temperature Range

−55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

R_θJA

R_θJC

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

.262

FDC2612

7’’

8mm

3000 units

FDC2612 Rev B3 (W)

2002 Fairchild Semiconductor Corporation

12 3 4 5

中文翻译

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