Datasheet > FDB8870_08

FDB8870_08

更新时间： 2024-10-01 03:36:23

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
11页	592K
描述
N-Channel PowerTrench㈢ MOSFET

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中文翻译

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数据手册

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FDB8870_08 数据手册

May 2008

FDB8870

N-Channel PowerTrench MOSFET

30V, 160A, 3.9mΩ

General Description

Features

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM

controllers. It has been optimized for low gate charge, low

•

= 3.9mΩ, V = 10V, I = 35A

GS D

DS(ON)

= 4.4mΩ, V = 4.5V, I = 35A

DS(ON)

High performance trench technology for extremely low

and fast switching speed.

DS(ON)

•

Low gate charge

Applications

High power and current handling capability

•

DC/DC converters

GATE

DRAIN

SOURCE

TO-263AB

FDB SERIES

(FLANGE)

MOSFET Maximum Ratings T = 25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

DSS

±20

Drain Current

160

150

Continuous (T = 25 C, V = 10V) (Note 1)

Continuous (T = 25 C, V = 4.5V) (Note 1)

C GS

Continuous (T

= 25 C, V = 10V, with R = 43 C/W)

θJA

amb

Pulsed

Figure 4

300

Single Pulse Avalanche Energy (Note 2)

Power dissipation

160

Derate above 25 C

1.07

W/ C

T , T

Operating and Storage Temperature

-55 to 175

STG

Thermal Characteristics

Thermal Resistance Junction to Case TO-263

0.94

C/W

θJC

θJA

Thermal Resistance Junction to Ambient TO-263 ( Note 3)

C/W

Thermal Resistance Junction to Ambient TO-263, 1in copper pad area

C/W

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

24mm

Quantity

800 units

FDB8870

TO-263AB

330mm

FDB8870 Rev. A3

12 3 4 5 6 7...11

中文翻译

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