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FDB9409-F085 PDF预览

FDB9409-F085

更新时间: 2023-09-03 20:34:17
品牌 Logo 应用领域
安森美 - ONSEMI 开关晶体管
页数 文件大小 规格书
7页 618K
描述
车用 N 沟道 MOSFET 40 V, 80 A, 3.5 mΩ

FDB9409-F085 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:not_compliant
风险等级:2.07雪崩能效等级(Eas):70 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:40 V最大漏极电流 (Abs) (ID):80 A
最大漏极电流 (ID):80 A最大漏源导通电阻:0.0035 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):94 W
参考标准:AEC-Q101表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):50 ns最大开启时间(吨):193 ns
Base Number Matches:1

FDB9409-F085 数据手册

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