Datasheet > FDB9403

FDB9403

更新时间： 2024-01-19 03:38:55

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	490K
描述
N-Channel Power TrenchÂ® MOSFET 40V, 110A, 1.2mÎ©

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数据手册

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FDB9403 数据手册

July

2012

FDB9403_F085

N-Channel Power Trench MOSFET

40V, 110A, 1.2mΩ

Features

Typ r

= 1mΩ at V = 10V, I = 80A

GS D

DS(on)

Typ Q

= 164nC at V = 10V, I = 80A

GS D

g(tot)

UIS Capability

RoHS Compliant

Qualified to AEC Q101

TO-263AB

FDB SERIES

Applications

Automotive Engine Control

Powertrain Management

Solenoid and Motor Drivers

Electronic Steering

Integrated Starter/alternator

Distributed Power Architectures and VRM

Primary Switch for 12V Systems

MOSFET Maximum Ratings T_J= 25°C unless otherwise noted

Symbol

V_DSS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

±20

V_GS

Drain Current - Continuous (V_GS=10) (Note 1)

Pulsed Drain Current

T_C= 25°C

110

I_D

See Figure4

704

E_AS

P_D

Single Pulse Avalanche Energy

(Note 2)

(Note 3)

W/^oC

^oC

^oC/W

Power Dissipation

Derate above 25^oC

333

2.22

T_J, T_STGOperating and Storage Temperature

-55 to + 175

0.45

R_θJC

R_θJA

Thermal Resistance Junction to Case

Maximum Thermal Resistance Junction to Ambient

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

330mm

Tape Width

Quantity

FDB9403

FDB9403_F085

TO-263AB

24mm

800 units

Notes:

1: Current is limited by bondwire configuration.

2: Starting T = 25°C, L = 0.18mH, I = 88A, V = 40V during inductor charging and V = 0V during time in avalanche

3: R_θJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder

mounting surface of the drain pins. R_θJCis guaranteed by design while R_θJAis determined by the user's board design. The maximum rating

presented here is based on mounting on a 1 in pad of 2oz copper.

FDB9403_F085_F085 Rev. B1

www.fairchildsemi.com

12 3 4 5 6

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