型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDB8896_F085 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 19A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Me |
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FDB8896-F085 | ONSEMI |
获取价格 |
30 V、93 A、4.7 mΩ、D2PAKN 沟道 PowerTrench® |
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FDB9403 | FAIRCHILD |
获取价格 |
N-Channel Power Trench® MOSFET 40V, 110A, 1. |
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FDB9403_F085 | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 110A I(D), 40V, 0.0012ohm, 1-Element, N-Channel, Silicon, M |
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FDB9403-F085 | ONSEMI |
获取价格 |
N 沟道,Power Trench® MOSFET,40V,110A,1.2mΩ |
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FDB9403L-F085 | ONSEMI |
获取价格 |
N 沟道,逻辑电平,PowerTrench® MOSFET,40 V,110 A,1.2 |
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FDB9406_F085 | FAIRCHILD |
获取价格 |
N-Channel Power Trench® MOSFET 40V, 110A, 1. |
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FDB9406-F085 | ONSEMI |
获取价格 |
N 沟道,PowerTrench® MOSFET,40 V,110 A,1.8 mΩ |
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FDB9406L-F085 | ONSEMI |
获取价格 |
N 沟道,逻辑电平,PowerTrench® MOSFET,40 V,110 A,1.5 |
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FDB9409-F085 | ONSEMI |
获取价格 |
车用 N 沟道 MOSFET 40 V, 80 A, 3.5 mΩ |
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