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FD200R12KE3 PDF预览

FD200R12KE3

更新时间: 2024-11-25 03:36:19
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页数 文件大小 规格书
9页 173K
描述
Technische Information / technical information

FD200R12KE3 数据手册

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Technische Information / technical information  
IGBT-Module  
IGBT-Modules  
FD200R12KE3  
Höchstzulässige Werte / maximum rated values  
Elektrische Eigenschaften / electrical properties  
Kollektor Emitter Sperrspannung  
collector emitter voltage  
Tvj= 25°C  
VCES  
1200  
V
200  
295  
A
A
Kollektor Dauergleichstrom  
DC collector current  
Tc= 80°C  
Tc= 25°C  
IC, nom  
IC  
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
tp= 1ms, Tc= 80°C  
ICRM  
400  
1040  
+/- 20  
200  
A
W
Gesamt Verlustleistung  
total power dissipation  
Tc= 25°C, Transistor  
Ptot  
Gate Emitter Spitzenspannung  
gate emitter peak voltage  
VGES  
V
Dauergleichstrom  
DC forward current  
IF  
A
Periodischer Spitzenstrom  
repetitive peak forward current  
tp= 1ms  
IFRM  
400  
A
Grenzlastintegral  
I²t value  
VR= 0V, tp= 10ms, Tvj= 125°C  
RMS, f= 50Hz, t= 1min.  
I²t  
7,8  
k A²s  
kV  
Isolations Prüfspannung  
insulation test voltage  
VISOL  
2,5  
Charakteristische Werte / characteristic values  
Transistor Wechselrichter / transistor inverter  
min.  
-
typ.  
1,7  
2,0  
max.  
2,15  
-
IC= 200A, VGE= 15V, Tvj= 25°C  
V
V
Kollektor Emitter Sättigungsspannung  
VCEsat  
VGE(th)  
QG  
collector emitter saturation voltage  
IC= 200A, VGE= 15V, Tvj= 125°C  
-
Gate Schwellenspannung  
gate threshold voltage  
IC= 8mA, VCE= VGE, Tvj= 25°C  
5,0  
5,8  
1,9  
14  
0,5  
-
6,5  
V
Gateladung  
gate charge  
VGE= -15V...+15V  
µC  
nF  
nF  
mA  
nA  
-
-
-
-
-
-
-
Eingangskapazität  
input capacitance  
f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V  
f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V  
Cies  
Rückwirkungskapazität  
reverse transfer capacitance  
Cres  
-
Kollektor Emitter Reststrom  
collector emitter cut off current  
VGE= 0V, Tvj= 25°C, VCE= 600V  
ICES  
5
Gate Emitter Reststrom  
gate emitter leakage current  
VCE= 0V, VGE= 20V, Tvj= 25°C  
IGES  
-
400  
prepared by: MOD-D2; Mark Münzer  
approved: SM TM; Wilhelm Rusche  
date of publication: 2002-10-02  
revision: 3.0  
DB_FD200R12KE3_3.0  
2002-10-02  
1 (8)  

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