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FD200R65KF1KNOSA1 PDF预览

FD200R65KF1KNOSA1

更新时间: 2024-11-25 21:11:39
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网晶体管
页数 文件大小 规格书
10页 165K
描述
Insulated Gate Bipolar Transistor, 400A I(C), 6300V V(BR)CES, N-Channel, MODULE-7

FD200R65KF1KNOSA1 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-XUFM-X7
Reach Compliance Code:compliant风险等级:5.68
外壳连接:ISOLATED最大集电极电流 (IC):400 A
集电极-发射极最大电压:6300 V配置:SINGLE WITH BUILT-IN DIODE
JESD-30 代码:R-XUFM-X7元件数量:1
端子数量:7封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
晶体管元件材料:SILICON标称断开时间 (toff):6500 ns
标称接通时间 (ton):1120 nsBase Number Matches:1

FD200R65KF1KNOSA1 数据手册

 浏览型号FD200R65KF1KNOSA1的Datasheet PDF文件第2页浏览型号FD200R65KF1KNOSA1的Datasheet PDF文件第3页浏览型号FD200R65KF1KNOSA1的Datasheet PDF文件第4页浏览型号FD200R65KF1KNOSA1的Datasheet PDF文件第5页浏览型号FD200R65KF1KNOSA1的Datasheet PDF文件第6页浏览型号FD200R65KF1KNOSA1的Datasheet PDF文件第7页 
Technische Information / Technical Information  
IGBT-Module  
IGBT-Modules  
FD 200 R 65 KF1-K  
Höchstzulässige Werte / Maximum rated values  
Elektrische Eigenschaften / Electrical properties  
Tvj=125°C  
6500  
6300  
5800  
Kollektor-Emitter-Sperrspannung  
Tvj=25°C  
VCES  
V
collector-emitter voltage  
Tvj=-40°C  
T
T
C = 80 °C  
C = 25 °C  
IC,nom.  
IC  
200  
400  
A
A
Kollektor-Dauergleichstrom  
DC-collector current  
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
t
P = 1 ms, TC = 80°C  
ICRM  
400  
3,8  
A
kW  
V
Gesamt-Verlustleistung  
total power dissipation  
TC=25°C, Transistor  
Ptot  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
VGES  
+/- 20V  
200  
Dauergleichstrom  
DC forward current  
IF  
A
Periodischer Spitzenstrom  
repetitive peak forw. current  
tP = 1 ms  
IFRM  
400  
A
Grenzlastintegral der Diode  
I2t - value, Diode  
I2t  
k A2s  
kV  
VR = 0V, tp = 10ms, TVj = 125°C  
RMS, f = 50 Hz, t = 1 min.  
26  
Isolations-Prüfspannung  
insulation test voltage  
VISOL  
10,2  
5,1  
Teilentladungs Aussetzspannung  
partial discharge extinction voltage  
RMS, f = 50 Hz, QPD typ. 10pC (acc. To IEC 1287)  
VISOL  
kV  
Charakteristische Werte / Characteristic values  
min. typ. max.  
Transistor / Transistor  
I
I
C = 200A, VGE = 15V, Tvj = 25°C  
C = 200A, VGE = 15V, Tvj = 125°C  
VCE sat  
-
4,3  
4,9  
V
V
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
-
5,3  
5,9  
Gate-Schwellenspannung  
gate threshold voltage  
I
C = 35mA, VCE = VGE, Tvj = 25°C  
VGE(th)  
6,4  
7,0  
2,8  
28  
8,1  
V
Gateladung  
gate charge  
VGE = -15V ... +15V  
QG  
-
-
-
µC  
nF  
Eingangskapazität  
input capacitance  
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V  
VCE = 6300V, VGE = 0V, Tvj = 25°C  
Cies  
-
-
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
0,2  
20  
mA  
mA  
ICES  
-
V
CE = 6500V, VGE = 0V, Tvj = 125°C  
Gate-Emitter Reststrom  
gate-emitter leakage current  
VCE = 0V, VGE = 20V, Tvj = 25°C  
IGES  
-
-
400  
nA  
prepared by: Dr. Oliver Schilling  
date of publication: 2002-08-30  
revision/Status: Series 1  
approved by: Dr. Schütze 2002-08-30  
1
FD 200 R65 KF1-K (final 1).xls  

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