生命周期: | Active | 包装说明: | FLANGE MOUNT, R-XUFM-X7 |
Reach Compliance Code: | compliant | 风险等级: | 5.68 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 400 A |
集电极-发射极最大电压: | 6300 V | 配置: | SINGLE WITH BUILT-IN DIODE |
JESD-30 代码: | R-XUFM-X7 | 元件数量: | 1 |
端子数量: | 7 | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 6500 ns |
标称接通时间 (ton): | 1120 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FD200R65KF2-K | INFINEON |
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IGBT-Module | |
FD200R65KF2KNOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 800A I(C), 6300V V(BR)CES, N-Channel, MODULE-9 | |
FD200S04A5B | VISHAY |
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Rectifier Diode, 1 Phase, 1 Element, 400V V(RRM), Silicon, DIE-2 | |
FD200S04A5F | VISHAY |
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Rectifier Diode, 1 Phase, 1 Element, 400V V(RRM), Silicon, DIE-2 | |
FD200S04A5P | VISHAY |
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Rectifier Diode, 1 Phase, 1 Element, 400V V(RRM), Silicon, DIE-2 | |
FD200S04A5R | VISHAY |
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Rectifier Diode, 1 Phase, 1 Element, 400V V(RRM), Silicon, DIE-2 | |
FD200S06A5B | VISHAY |
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Rectifier Diode, 1 Element, 600V V(RRM), | |
FD200S06A5P | VISHAY |
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Rectifier Diode, 1 Element, 600V V(RRM), | |
FD200S06A5R | VISHAY |
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Rectifier Diode, 1 Element, 600V V(RRM), | |
FD2046 | BOTHHAND |
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10 BASE-T, SIL FILTER (WITH 2 COMMON CHOKE) |