Datasheet > FD200S06A5R

FD200S06A5R

更新时间： 2024-11-25 21:10:15

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
3页	485K
描述
Rectifier Diode, 1 Element, 600V V(RRM),

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FD200S06A5R 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.84	配置：	SINGLE
二极管类型：	RECTIFIER DIODE	最大正向电压 (VF)：	1.68 V
元件数量：	1	最大重复峰值反向电压：	600 V
子类别：	Rectifier Diodes	Base Number Matches：	1

FD200S06A5R 数据手册

Bulletin PD - 20991 rev. B

FD200S06A5B

FRED Die in Wafer Form

600V

V_F= 1.68V

(max.)

^z100% Tested at Probe c

z Available in Tape and Reel (upon request),

Chip Pack, and Sawn on Film d

5" Wafer

Electrical Characteristics @ T = 25°C (unless otherwise specified)

Parameter

V_FM

Description

Maximum Forward Voltage

Min

–––

Typ

–––

Max

Test Conditions

1.68V T_J= 25°C, I_F= 60A

V_RRM

I_RM

t_rr

Minimum Reverse Breakdown Voltage 600V

–––

34ns

81ns

1400nC

––– T_J= 25°C, I_RRM= 100µA

20µA T_J= 25°C, V_RRM= 600V

––– I_F= 1A, di/dt = 200A/µs, V_R= 30V

––– I_F= 60A, di/dt = 200A/µs, V_R= 200V

––– T_J= 125°C, I_F= 60A, di/dt = 200A/µs, V_R= 200V

Max. Reverse Leakage Current

Typ. Reverse Recovery Time

–––

Q_rr

Typ. Reverse Recovery Charge

Mechanical Data

Nominal Back Metal Composition, Thickness:

Nominal Front Metal Composition, Thickness:

Dimensions:

Cr-Ni-Ag ( 1kA-2kA-3kA)

99%Al, 1%Si (3mm)

0.200" x 0.200" (see drawing)

125 mm

Wafer Diameter:

Wafer Thickness:

Scribe Line Width

14 mils

90 ±10 µm

Reject Ink Dot Size

0.25 mm Diameter Minimum

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300 °C

60EPU06, 60APU06 Series

Recommended Storage Environment:

Recommended Die Attach Conditions:

Reference Package

Die Outline

NOTES:

40 (1.57)

Wafer flat alligned with

side b of the die

1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS).

2. CONTROLLING DIMENSION (INCH):

0.35 ± 0.01

(14 ± 0.4)

3. DIMENSIONS AND TOLERANCES:

a = 5.08 +0, - 0.01

(200 +0, - 0.4)

b = 5.08 +0, - 0.01

(200 +0, - 0.4)

c = 4.02 +0, - 0.01

(158.1 +0, - 0.4)

d = 4.02 +0, - 0.01

(158.1 +0, - 0.4)

4. LETTER DESIGNATION:

A = Anode (Top Metal)

C = Cathode (Back Metal)

5. SAWING:

125 (4.92)

Recommended Blade

SEMITEC S1025 QS00 Blade

Note:

c The above data sheet is based on IR sample testing under certain predetermined and assumed conditions, and is

provided for illustration purposes only. Customers are encouraged to perform testing in actual proposed packaged

and use conditions. IR die products are tested using IR-based quality assurance procedures and are manufactured

using IR’s established processes. Programs for customer-specified testing are available upon request. IR has

experienced assembly yields of generally 95% or greater for individual die; however, customer’s results may vary.

Estimates such as those described and set forth in this data sheet for semiconductor die will vary depending on a

number of packaging, handling, use and other factors. Sold die may not perform on an equivalent basis to standard

package products and are therefore offered with a limited warranty as described in IR’s applicable standard terms

and conditions of sale. All IR die sales are subject to IR’s applicable standard terms and conditions of sale, which

are available upon request.

d Part number shown is for die in waveform. Contact factory for these other options.

10/22/03

Document Number: 93879

www.vishay.com

12 3

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