是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | MODULE |
包装说明: | MODULE-7 | 针数: | 7 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 1 week | 风险等级: | 5.8 |
Is Samacsys: | N | 最大集电极电流 (IC): | 1000 A |
集电极-发射极最大电压: | 6300 V | 配置: | SINGLE WITH BUILT-IN DIODE |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-XUFM-X7 |
元件数量: | 1 | 端子数量: | 7 |
最高工作温度: | 175 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 3800 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 6500 ns |
标称接通时间 (ton): | 1120 ns | VCEsat-Max: | 4.9 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FD200R65KF2KNOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 800A I(C), 6300V V(BR)CES, N-Channel, MODULE-9 | |
FD200S04A5B | VISHAY |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 400V V(RRM), Silicon, DIE-2 | |
FD200S04A5F | VISHAY |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 400V V(RRM), Silicon, DIE-2 | |
FD200S04A5P | VISHAY |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 400V V(RRM), Silicon, DIE-2 | |
FD200S04A5R | VISHAY |
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Rectifier Diode, 1 Phase, 1 Element, 400V V(RRM), Silicon, DIE-2 | |
FD200S06A5B | VISHAY |
获取价格 |
Rectifier Diode, 1 Element, 600V V(RRM), | |
FD200S06A5P | VISHAY |
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Rectifier Diode, 1 Element, 600V V(RRM), | |
FD200S06A5R | VISHAY |
获取价格 |
Rectifier Diode, 1 Element, 600V V(RRM), | |
FD2046 | BOTHHAND |
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10 BASE-T, SIL FILTER (WITH 2 COMMON CHOKE) | |
FD2046LF | BOTHHAND |
获取价格 |
10 BASE-T, SIL FILTER(WITH 2 COMMON CHOKE) APPLY TO GENERIC IC |