是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | compliant | 风险等级: | 5.59 |
峰值回流温度(摄氏度): | NOT SPECIFIED | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FD200R12PT4B6BOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor | |
FD200R65KF1-K | ETC |
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SCALE High Voltage IGBT Driver | |
FD200R65KF1KNOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 400A I(C), 6300V V(BR)CES, N-Channel, MODULE-7 | |
FD200R65KF2-K | INFINEON |
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IGBT-Module | |
FD200R65KF2KNOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 800A I(C), 6300V V(BR)CES, N-Channel, MODULE-9 | |
FD200S04A5B | VISHAY |
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Rectifier Diode, 1 Phase, 1 Element, 400V V(RRM), Silicon, DIE-2 | |
FD200S04A5F | VISHAY |
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Rectifier Diode, 1 Phase, 1 Element, 400V V(RRM), Silicon, DIE-2 | |
FD200S04A5P | VISHAY |
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Rectifier Diode, 1 Phase, 1 Element, 400V V(RRM), Silicon, DIE-2 | |
FD200S04A5R | VISHAY |
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Rectifier Diode, 1 Phase, 1 Element, 400V V(RRM), Silicon, DIE-2 | |
FD200S06A5B | VISHAY |
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Rectifier Diode, 1 Element, 600V V(RRM), |