是否Rohs认证: | 符合 | 生命周期: | Transferred |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.51 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 2 A |
基于收集器的最大容量: | 50 pF | 集电极-发射极最大电压: | 25 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 15 |
JESD-30 代码: | R-PSSO-F3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | MATTE TIN |
端子形式: | FLAT | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 240 MHz |
VCEsat-Max: | 0.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FCX653 | ZETEX |
获取价格 |
Transistor | |
FCX653TA | DIODES |
获取价格 |
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
FCX658A | TYSEMI |
获取价格 |
400 Volt VCEO, Optimised hfe characterised upto 200mA | |
FCX658A | DIODES |
获取价格 |
SOT89 NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR | |
FCX658A | KEXIN |
获取价格 |
NPN Silicon Planar Medium Power High Voltage Transistor | |
FCX658A | ZETEX |
获取价格 |
NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR | |
FCX658ATA | DIODES |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89 | |
FCX658ATC | ZETEX |
获取价格 |
Transistor, SO89-3 | |
FCX688B | ZETEX |
获取价格 |
NPN SILICON POWER (SWITCHING) TRANSISTOR | |
FCX688B | DIODES |
获取价格 |
SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR |