FCX619

更新时间： 2024-11-05 10:31:59

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
3页	564K
描述
SOT89 NPN SILICON POWER

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数据手册

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FCX619 数据手册

SOT89 NPN SILICON POWER

(SWITCHING) TRANSISTOR

FCX619

ISSUE 6 - J ANUARY 2003

FEATURES

2 W P OWER DIS S IP ATION

6A PEAK PULSE CURRENT

EXCELLENT h_FECHARACTERISTICS UP TO 6 Am ps

EXTREMELY LOW SATURATION VOLTAGE e.g. 13m V typ.

EXTREMELY LOW EQUIVALENT ON-RESISTANCE;

R_CE(sat)87m Ω at 2.75A

COMPLIMENTARY TYPE -

PARTMARKING DETAIL -

FCX720

619

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

S YMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Co lle cto r-Ba s e Vo lta g e

Co lle cto r-Em itte r Vo lta g e

Em itte r-Ba s e Vo lta g e

Pe a k Pu ls e Cu rre n t

Co n tin u o u s Co lle cto r Cu rre n t †

Ba s e Cu rre n t

I_C

3.0

500

I_B

m A

Po w e r Dis s ip a tio n a t T_{a m b}=25°C

P_{to t}

1.5†

2‡

Op e ra tin g a n d S to ra g e Te m p e ra tu re Ra n g e

T_j:T_{s tg}

-55 to +150

°C

†

‡

recom m ended P_totcalculated using FR4 m easuring 25x25x0.6m m

Maxim um power dissipation is calculated assum ing that the device is m ounted on FR4

substrate m easuring 40x40x0.6m m and using com parable m easurem ent m ethods adopted by

other suppliers.

**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

Spice param eter data is available upon request for these devices

Refer to the handling instructions for soldering surface m ount com ponents.

12 3

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