Datasheet > FCX619

FCX619

更新时间： 2024-11-06 06:59:03

品牌	Logo	应用领域
科信 - KEXIN		晶体开关晶体管
页数	文件大小	规格书
2页	52K
描述
NPN Silicon Power Switching Transistor

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中文翻译

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数据手册

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FCX619 数据手册

SMD Type

Transistors

NPN Silicon Power Switching Transistor

FCX619

Features

2W power dissipation.

6A peak pulse current.

Excellent HFE characteristics up to 6 amps.

Extremely low saturation voltage E.g. 13mv Typ.

Extremely low equivalent on-resistance.

R^CE(sat)87mÙ at 2.75A.

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

Rating

Unit

V^CBO

V^CEO

V^EBO

I^CM

Collector-emitter voltage

Emitter-base voltage

Continuous collector current

Peak pulse current

I^C

3.0

Base current

I^B

500

1.5

Power dissipation

P^tot

Operating and storage temperature range

T^j,Tstg

-55 to +150

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