型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FCH20BU10 | KYOCERA AVX |
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Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b | |
FCH20E10 | KYOCERA AVX |
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Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b | |
FCH20N60 | FAIRCHILD |
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600V N-Channel MOSFET | |
FCH20N60_06 | FAIRCHILD |
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600V N-Channel MOSFET | |
FCH20N60_07 | FAIRCHILD |
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600V N-Channel MOSFET | |
FCH20U10 | NIEC |
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Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 100V V(RRM), Silicon | |
FCH20U15 | NIEC |
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Schottky Barrier Diode | |
FCH20UB10 | NIEC |
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Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 100V V(RRM), Silicon | |
FCH22N60N | FAIRCHILD |
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Ultra Low Gate Charge (Typ. Qg = 45 nC), Low Effective Output Capacitance (Typ. Coss.eff = | |
FCH22N60N | ONSEMI |
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功率 MOSFET,N 沟道,SUPREMOS®,FAST,600 V,22 A,165 |