Datasheet > FCH20N60_06

FCH20N60_06

更新时间： 2024-02-08 00:12:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
10页	775K
描述
600V N-Channel MOSFET

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FCH20N60_06 数据手册

December 2006

SuperFET

FCH20N60 / FCA20N60

600V N-Channel MOSFET

Features

Description

•

650V @T_J= 150°C

SuperFET^TMis, Farichild’s proprietary, new generation of high

voltage MOSFET family that is utilizing an advanced charge

balance mechanism for outstanding low on-resistance and

lower gate charge performance.

Typ. Rds(on)=0.15Ω

Ultra low gate charge (typ. Qg=55nC)

Low effective output capacitance (typ. Coss.eff=110pF)

100% avalanche tested

This advanced technology has been tailored to minimize

conduction loss, provide superior switching performance, and

withstand extreme dv/dt rate and higher avalanche energy.

Consequently, SuperFET is very suitable for various AC/DC

power conversion in switching mode operation for system

miniaturization and higher efficiency.

TO-247

TO-3P

FCH Series

FCA Series

G D S

Absolute Maximum Ratings

Symbol

Parameter

FCH20N60 FCA20N60

Unit

V_DSS

Drain-Source Voltage

Drain Current

600

I_D

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

12.5

(Note 1)

(Note 2)

I_DM

Drain Current

- Pulsed

± 30

690

V_GSS

E_AS

I_AR

Gate-Source voltage

Single Pulsed Avalanche Energy

Avalanche Current

(Note 1)

(Note 3)

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

20.8

4.5

V/ns

Power Dissipation

(T_C= 25°C)

208

- Derate above 25°C

1.67

W/°C

_J,T_STG

Operating and Storage Temperature Range

-55 to +150

300

°C

T_L

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

°C

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

0.6

Unit

R_θJC

R_θCS

R_θJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

0.24

°C/W

Thermal Resistance, Junction-to-Ambient

41.7

°C/W

FCH20N60 / FCA20N60 Rev. A2

www.fairchildsemi.com

12 3 4 5 6 7...10

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