Datasheet > ESDB102-BP

ESDB102-BP

更新时间： 2024-11-21 06:08:07

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
3页	83K
描述
Rectifier Diode,

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中文翻译

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数据手册

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ESDB102-BP 数据手册

M C C

ESDB101

THRU

ESDB103

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20736 Marilla Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

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Micro Commercial Components

1 Amp Single Phase

Fast Recovery

Features

•

Surface Mount Package

Glass Passivated Diode Construction

Case Material: Molded Plastic. UL Flammability

Bridge Rectifier

50 to 200 Volts

Classification Rating 94V-0

UL Recognized File # E165989

•

SDB-1

Maximum Ratings

•

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

∼

MCC

Device

Maximum

Recurrent

Peak Reverse

Voltage

50V

Maximum Maximum

Catalog

Number

Marking

RMS

Blocking

Voltage

50V

Voltage

Notch in Case

35V

70V

ESDB101

ESDB102

ESDB103

ESDB101

ESDB102

ESDB103

100V

200V

140V

200V

Electrical Characteristics @ 25R Unless Otherwise Specified

DIMENSIONS

INCHES

MIN

.316

.245

.040

.360

.102

.003

.195

.038

MIN

DIM

MAX

.335

.255

.060

.410

.125

.013

.205

.042

MAX

8.51

6.50

1.52

10.4

3.2

.330

5.20

1.10

NOTE

I_F(AV)

I_FSM

Average Forward Current

TA = 40R

8.05

6.20

1.02

9.40

2.60

.076

5.00

1.00

Peak Forward Surge Current

50A

8.3ms, half sine

°C

IFM= 1.0A; TA = 25

Maximum Instantaneous

Forward Voltage

V_F

I_R

1.05V

TA= 25R

Maximum DC Reverse Current

At Rated DC Blocking Voltage

Suggested Solder Pad

Layout

1mA

TA= 125R

Measured at 1.0MHz,

VR=4.0V

C_J

Typical Junction Capacitance

Rating For Fusing

25pF

.047”

I²t

10A²s

50 ns

t<8.3ms

I_F= 0.5 A, I_R= 1.0 A,

Irr = 0.25 A

Max. Reverse Recovery Time

Per Diode

Trr

.344”

.060”

.205”

www.mccsemi.com

1 of 3

Revision: 1

2006/11/03

12 3

中文翻译

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