Datasheet > ESDB5V0FP

ESDB5V0FP

更新时间： 2023-12-06 20:11:27

品牌	Logo	应用领域
先科 - SWST		二极管
页数	文件大小	规格书
3页	202K
描述
静电保护二极管

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数据手册

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ESDB5V0FP 数据手册

ESDB5V0FP

ESD Protection Diode

PINNING

DESCRIPTION

Anode

Features

Anode

• Low clamping voltage

• Low leakage current

• Bi-direction high reliability

Transparent top view

Simplified outline DFN1006-2H and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

P_PK

Value

130

Unit

Peak Pulse Power (tp = 8/20 µs)

Peak Pulse Current (tp = 8/20 µs)

ESD contact discharge (IEC61000-4-2)

Junction Temperature

I_PP

V_ESD

T_j

± 30

℃

125

Storage Temperature Range

T_stg

- 65 to + 150

℃

Characteristics at T_a= 25℃

Parameter

Symbol

V_RWM

Min.

Typ.

Max.

Unit

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

at I_R= 1 mA

V_(BR)R

5.5

9.5

Reverse Current

at V_RWM= 5 V

I_R

100

Clamping Voltage

at I_PP= 1 A, tp = 8/20 µs

at I_PP= 12 A, tp = 8/20 µs

V_C

ESD Clamping Voltage

at I_TLP= 4 A, tp = 100 ns, tn = 0.2 ns

at I_TLP= 16 A, tp = 100 ns, tn = 0.2 ns

V_CL

7.38

8.15

Junction Capacitance

at V_R= 0 V, f = 1 MHz

Dynamic Resistance ¹⁾

C_j

R_dyn

0.06

Ω

¹⁾Dynamic Resistance calculated from I_TLP= 4 A to I_TLP= 16 A.

1 / 3

Dated: 14/06/2023 Rev: 07

12 3

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