Datasheet > ESAC63-004R_10

ESAC63-004R_10

更新时间： 2024-09-22 10:15:39

品牌	Logo	应用领域
富士电机 - FUJI		肖特基二极管
页数	文件大小	规格书
6页	466K
描述
Schottky Barrier Diode

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中文翻译

获取价格

数据手册

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ESAC63-004R_10 数据手册

http://www.fujisemi.com

FUJI Diode

ESAC63-004R

Schottky Barrier Diode

Maximum Rating and Characteristics

Maximum ratings (at Ta=25˚C unless otherwise speciﬁed.)

Item

Symbols

Conditions

Ratings

Units

Repetitive peak surge reverse voltage

Repetitive peak reverse voltage

VRSM

tw=500ns, duty=1/40

RRM

50Hz Square wave duty =1/2

Tc = 109˚C

Average output current

20 *

Non-repetitive forward surge current**

Operating junction temperature

Storage temperature

FSM

Sine wave, 10ms 1shot

120

150

˚C

Tstg

-40 to +150

Note* Out put current of center tap full wave connection.

Note** Rating per element

Electrical characteristics (at Ta=25˚C unless otherwise speciﬁed.)

Item

Symbols

Conditions

Maximum

Units

Forward voltage***

Reverse current***

Thermal resistance

Note*** Rating per element

= 10 A

0.6

=VRRM

Rth(j-c)

Junction to case

˚C/W

Mechanical characteristics

Item

Conditions

Maximum

0.3 to 0.5

Units

N•m

Mounting torque

Approximate mass

Recommended torque

12 3 4 5 6

中文翻译

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