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ESAC83-004 PDF预览

ESAC83-004

更新时间: 2024-11-26 03:34:51
品牌 Logo 应用领域
富士电机 - FUJI 肖特基二极管
页数 文件大小 规格书
3页 57K
描述
SCHOTTKY BARRIER DIODE

ESAC83-004 数据手册

 浏览型号ESAC83-004的Datasheet PDF文件第2页浏览型号ESAC83-004的Datasheet PDF文件第3页 
(40V / 20A )  
ESAC83-004 (20A)  
Outline drawings, mm  
SCHOTTKY BARRIER DIODE  
15.5 Max.  
4.5±0.2  
Ø3.2±0.1  
13.0  
7.2±0.1  
10.0  
2.0  
15±0.2  
1
2
3
2.2  
1.6  
1.6  
1.1  
1.5  
0.5  
5.45 5.45  
Features  
Low VF  
JEDEC  
EIAJ  
SC-65  
Super high speed switching  
High reliability by planer design  
Connection diagram  
Applications  
High speed power switching  
2
1
3
Maximum ratings and characteristics  
Absolute maximum ratings  
Symbol  
VRRM  
VRSM  
Io  
Conditions  
Item  
Rating  
Unit  
V
40  
Repetitive peak reverse voltage  
Non-repetitive peak reverse voltage  
Average output current  
Surge current  
48  
20*  
120  
tw=500ns, duty=1/40  
V
Square wave, duty=1/2  
Tc=119°C  
A
Sine wave  
10ms  
IFSM  
Tj  
A
Operating junction temperature  
Storage temperature  
-40 to +150  
-40 to +150  
°C  
°C  
Tstg  
* Average forward current of centertap full wave connection  
Electrical characteristics (Ta=25°C Unless otherwise specified )  
Item  
Unit  
V
Symbol  
VFM  
Max.  
0.55  
15  
Conditions  
IFM=8A  
Forward voltage drop  
Reverse current  
VR=VRRM  
mA  
°C/W  
IRRM  
Junction to case  
Thermal resistance  
Rth(j-c)  
1.5  

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