ESAC83M-004R

更新时间： 2024-11-26 02:59:43

品牌	Logo	应用领域
富士电机 - FUJI		肖特基二极管
页数	文件大小	规格书
3页	92K
描述
SCHOTTKY BARRIER DIODE

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中文翻译

获取价格

数据手册

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ESAC83M-004R 数据手册

(40V / 20A )

ESAC83M-004R (20A)

Outline drawings, mm

SCHOTTKY BARRIER DIODE

5.5^±0.3

15.5 ^±0.3

ø3.2 ^±0.2

3.2^+0.3

2.1^±0.3

1.6^±0.3

1.1^—⁺⁰⁰^.2^.1

3.5 ^±0.2

5.45^±0.2

5.45 ^±0.2

0.6^+0.2

1. Gate

2. Drain

3. Source

Features

Insulated package by fully molding

JEDEC

EIAJ

Low VF

Super high speed switching

Connection diagram

High reliability by planer design

Applications

High speed power switching

Maximum ratings and characteristics

Absolute maximum ratings

Symbol

V^RRM

VRSM

Conditions

Item

Rating

Unit

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

Average output current

Surge current

20*

120

tw=500ns, duty=1/40

Square wave, duty=1/2

Tc=99°C

Sine wave

10ms

IFSM

Operating junction temperature

Storage temperature

-40 to +150

°C

Tstg

* Average forward current of centertap full wave connection

Electrical characteristics (Ta=25°C Unless otherwise specified )

Item

Unit

Symbol

VFM

Max.

0.55

Conditions

I^FM=8A

Forward voltage drop

Reverse current

VR=VRRM

°C/W

IRRM

Junction to case

Thermal resistance

Rth(j-c)

2.5

12 3

中文翻译

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