Photodiode
EPD-270-0-0.3-2
Preliminary
11.04.2007
Technology
rev. 02/07
Type
Case
Wavelength
UV-C
clear UV-glass + filter
SiC
TO-39
Description
8,33
6,35
Selective photodiode with high spectral sensitivity
in the UVC range (230 nm - 285 nm), mounted in
hermetically sealed TO-39 package with clear
UV-glass window and filter
Filter
Chip
Note: housing with diffuse glass window available on request
Applications
Environmental technology, analytical techniques,
medical applications, industrial sensors,
inspecting and controlling of UV radiation as well
as for more general purposes
Miscellaneous Parameters
Tamb = 25°C, unless otherwise specified
Parameter
Test сonditions
Symbol
Value
Unit
Active area
A
0.056
0.1
mm²
%/K
°C
Temperature coefficient of IPh
Operating temperature range
Storage temperature range
Acceptance angle at 50% Sλ
TC(IPh)
Tamb
Tstg
-40 to +70
-40 to +100
70
°C
deg.
ϕ
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Test conditions
Symbol
Min
230
Typ
Max
100
Unit
Breakdown voltage1)
Dark current
IR = 100 µA
VR = 1 V
VR
ID
20
10
V
fA
VR = 0 V
λp
Peak sensitivity wavelength
Responsivity at λP
270
0.11
nm
VR = 0 V
Sλ
A/W
nm
VR = 0 V
λmin, λmax
∆λ0.5
RSH
NEP
D*
Sensitivity range at 1%
Spectral bandwidth at 50%
Shunt resistance
285
VR = 0 V
35
1
1.3x10-14
1.9x1013
20
nm
VR = 10 mV
TΩ
Noise equivalent power
Specific detectivity
W/ Hz
λ = 270 nm
λ = 270 nm
VR = 0 V
cm Hz W −1
CJ
Junction capacitance
pF
VR = 0 V
Ee = 100 µW/cm²
Photo current at λ = 254 nm1,2)
IPh
2.6
nA
1)for information only
2)measured with Hg-LP UV-emitter as radiation source
Note: All measurements carried out with EPIGAP equipment
Labeling
RD (typ.) [Tꢀ]
Quantity
Type
Lot N°
EPD-270-0-0.3-2
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 2
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545