Photodiode
EPD-280-0-0.3-1
Preliminary
11.04.2007
Technology
rev. 02/07
Type
Case
Wavelength
clear UV-glass
SiC
TO-46
UV-A – UV-C
Description
Highly reliable photodiode with high spectral
sensitivity in the UV range (220 nm - 380 nm),
mounted in hermetically sealed TO-46 package
with clear UV-glass window
+0,1
-0,1
5,1
Ø 5,31
Ø 4,22
+0,025
-0,025
0,2
Note: housing with diffuse glass window available on request
Cathode
Applications
Anode
Chip Location
+1,6
-1,6
13,4
0,23 +0,075
Environmental technology, analytical techniques,
medical applications, industrial sensors,
inspecting and controlling of UV radiation as well
as for more general purposes
TO-46
Miscellaneous Parameters
Tamb = 25°C, unless otherwise specified
Parameter
Test сonditions
Symbol
Value
Unit
Active area
A
0.056
0.1
mm²
%/K
°C
Temperature coefficient of IPh
Operating temperature range
Storage temperature range
Acceptance angle at 50% Sλ
TC(IPh)
Tamb
Tstg
-40 to +70
-40 to +100
50
°C
deg.
ϕ
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Test conditions
Symbol
Min
220
Typ
Max
100
Unit
Breakdown voltage1)
Dark current
IR = 100 µA
VR = 1 V
VR
ID
20
5
V
fA
VR = 0 V
λp
Peak sensitivity wavelength
Responsivity at λP
280
0.13
nm
VR = 0 V
Sλ
A/W
nm
VR = 0 V
λmin, λmax
∆λ0.5
RSH
NEP
D*
Sensitivity range at 1%
Spectral bandwidth at 50%
Shunt resistance
380
VR = 0 V
80
2
7.6x10-16
3.1x1013
20
nm
VR = 10 mV
TΩ
Noise equivalent power
Specific detectivity
W/ Hz
λ = 280 nm
λ = 280 nm
VR = 0 V
cm Hz W −1
CJ
Junction capacitance
pF
VR = 0 V
Ee = 100 µW/cm²
Photo current at λ = 254 nm1,2)
IPh
3.5
nA
1)for information only
2)measured with Hg-LP UV-emitter as radiation source
Note: All measurements carried out with EPIGAP equipment
Labeling
RD (typ.) [Tꢀ]
Quantity
Type
Lot N°
EPD-280-0-0.3-1
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 2
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545