Datasheet > EPC-440-1.4

EPC-440-1.4

更新时间： 2024-11-07 06:57:43

品牌	Logo	应用领域
EPIGAP		光电二极管光电二极管
页数	文件大小	规格书
2页	26K
描述
Photodiode-Chip

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数据手册

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EPC-440-1.4 数据手册

Photodiode-Chip

EPC-440-1.4

Preliminary

11.04.207

Technology

rev. 04/07

Type

Electrodes

Wavelength range

UV-blue-green

Schottky Contact

GaP

P (anode) up

1360

1300

1100

typ. dimensions (µm)

typ. thickness

300 µm

Description

High spectral sensitivity in

the blue and ultraviolet

range, low dark currents,

low cost chip with high

degradation stability

anode

gold alloy, 1.5 µm

cathode

Applications

special light barriers,

sensors for flame control

and automation

gold alloy, 0.5 µm

PD-04

Miscellaneous Parameters

T_amb= 25°C, unless otherwise specified

Parameter

Test сonditions

Symbol

Value

Unit

Active area

1.2

mm²

%/K

°C

Temperature coefficient of I_D

Operating temperature range

Storage temperature range

T_C(I_D)

T_amb

T_stg

7.0

-40 to +125

°C

Optical and Electrical Characteristics

T_amb= 25°C, unless otherwise specified

Test

Parameter

Symbol

Min

Typ

Max

Unit

conditions

V_R= 5 V

V_R= 0 V

V_R= 10 mV

I_D

λ_p

Dark current

Peak sensitivity wavelength

440

0.17

S_λ

A/W

Responsivity at λ_P

λ_min, λ_max

∆λ_0.5

R_D

Sensitivity range at 1%

Spectral bandwidth at 50%

Shunt resistance

<110

150

570

180

200

GΩ

1.1x10^-14

W/ Hz

Noise equivalent power

Junction capacitance

Switching time (R_L= 50 ꢀ)

NEP

C_J

λ = 440 nm

V_R= 0 V

300

V_R= 5 V

t_r, t_f

1/20

*Measured on bare chip on TO-18 header with EPIGAP equipment

Labeling

Typ. I_D[pA] Typ. S_λ[A/W]

Type

Lot N°

Quantity

EPC-440-1.4

Packing: Chips on adhesive film with wire-bond side on top

EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201

1 of 2

Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545

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