Datasheet > EPC-660-0.9

EPC-660-0.9

更新时间： 2022-12-28 03:35:12

品牌	Logo	应用领域
EPIGAP		光电二极管光电二极管
页数	文件大小	规格书
2页	99K
描述
Photodiode-Chip

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数据手册

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EPC-660-0.9 数据手册

Photodiode-Chip

EPC-660-0.9

Preliminary

11.04.2007

Technology

rev. 07/07

Type

Electrodes

Wavelength range

Red, selective

Integrated filter

AlGaAs/GaAs

P (anode) up

860

800

720

typ. dimensions (µm)

typ. thickness

260 µm

Description

red-selective photodiode

with narrow response

range (660 nm peak)

anode

gold alloy, 1.5 µm

cathode

gold alloy, 0.5 µm

Applications

Optical communications,

safety equipment, light

barriers

PD-03

Miscellaneous Parameters

T_amb= 25°C, unless otherwise specified

Parameter

Test сonditions

Symbol

Value

0.62

Unit

mm²

°C

Active area

Operating temperature range

Storage temperature range

T_amb

T_stg

-40 to +125

°C

Optical and Electrical Characteristics

T_amb= 25°C, unless otherwise specified

Test

Parameter

Symbol

λ_P

Min

620

Typ

660

Max

700

Unit

A/W

conditions

V_R= 0 V

Peak sensitivity

V_R= 0 V

λ_0.5

S_λ

Spectral range at 50 %

V_R= 0 V

0.2

0.42

Responsivity at λ_P

V_R= 0 V

S_λ

Responsivity at λ_P

V_R= 0 V

∆λ_0,5

I_D

Spectral bandwidth at 50%

V_R= 1 V

V_R= 0 V

V_R= 1 V

Dark current

300

C_J

Junction capacitance

t_r,t_f

Switching time

¹Measured on bare covered chip on TO-18 header

²Measured on epoxy covered chip on TO-18 header

Labeling

Typ. I_D[pA]

Typ. S_λ[A/W]

Lot N°

Quantity

Type

EPС-660-0.9

Packing: Chips on adhesive film with wire-bond side on top

*Note: All measurements carried out with EPIGAP equipment

EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201

1 of 2

Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545

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