Datasheet > EPC-740-0.9

EPC-740-0.9

更新时间： 2024-12-01 10:14:11

品牌	Logo	应用领域
EPIGAP		光电二极管光电二极管
页数	文件大小	规格书
2页	53K
描述
Photodiode-Chip

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数据手册

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EPC-740-0.9 数据手册

Photodiode-Chip

EPC-740-0.9

Preliminary

6/28/2007

Technology

rev. 04/07

Type

Electrodes

Wavelength range

Infrared, selective

Integrated filter

AlGaAs/GaAs

P (anode) up

typ. dimensions (µm)

860

800

720

Description

typ. thickness

300 (±20) µm

Infrared-selective

photodiode with narrow

response range

anode

(680-770 nm)

gold alloy, 1.5 µm

cathode

Applications

Optical communications,

safety equipment, light

barriers

gold alloy, 0.5 µm

PD-03

Miscellaneous Parameters

T_amb= 25°C, unless otherwise specified

Parameter

Test сonditions

Symbol

Value

Unit

Active area

0.62

mm²

°C

Operating temperature range

Storage temperature range

T_amb

T_stg

-40 to +125

°C

Optical and Electrical Characteristics

T_amb= 25°C, unless otherwise specified

Test

conditions

Parameter

Symbol

Min

Typ

Max

200

Unit

Reverse voltage²

Dark current

I_R= 10 µA

V_R= 5 V

V_R= 0 V

V_R= 5 V

V_R

I_D

0.5

740

S_λ

A/W

Responsivity at λ_P

Peak sensitivity

λ_P

λ_0.5

∆λ_0.4

C_J

Spectral range at 10 %

Spectral bandwidth at 50%

Junction capacitance

Switching time

680

770

t_r,t_f

15/30

¹Measured on bare chip on TO-18 header

²information only

Labeling

Typ. I_D[pA]

Typ. S_λ[A/W]

Lot N°

Quantity

Type

EPС-740-0.9

Packing: Chips on adhesive film with wire-bond side on top

*Note: All measurements carried out with EPIGAP equipment

EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201

1 of 2

Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545

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