Photodiode-Chip
EPC-880-0.5
Preliminary
11.04.2007
Technology
rev. 04/07
Type
Electrodes
Wavelength range
Infrared, selective
Integrated filter
AlGaAs/GaAs
P (anode) up
460
typ. dimensions (µm)
360
300
typ. thickness
300 (±20) µm
Description
Infrared-selective photo-
diode with narrow
response range
anode
gold alloy, 1.5 µm
(810 - 950 nm)
cathode
gold alloy, 0.5 µm
Applications
Optical communications,
safety equipment, light
barriers
PD-02
Miscellaneous Parameters
Tamb = 25°C, unless otherwise specified
Parameter
Test сonditions
Symbol
Value
0.17
Unit
mm²
°C
Active area
A
Tamb
Tstg
Operating temperature range
Storage temperature range
-40 to +125
-40 to +125
°C
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Test
Parameter
Symbol
ID
Min
Typ
Max
2.5
Unit
nA
conditions
VR = 1 V
VR = 0 V
VR = 0 V
VR = 0 V
VR = 0 V
VR = 1 V
Dark current
1.0
λP
Peak sensitivity
nm
nm
nm
A/W
ns
890
λ0.5
∆λ0.5
Sλ
Spectral range at 50 %
820
935
Spectral bandwidth at 50%
115
0.25
1
Responsivity at λP
0.15
tr, tf
Switching time
15/30
1Measured on bare chip on TO-18 header
Labeling
Typ. ID [pA]
Type
Typ. Sλ[A/W]
Lot N°
Quantity
EPС-880-0.5
Packing: Chips on adhesive film with wire-bond side on top
*Note: All measurements carried out with EPIGAP equipment
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 2
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545