Datasheet > EPC-880-0.5

EPC-880-0.5

更新时间： 2024-12-01 06:57:43

品牌	Logo	应用领域
EPIGAP		光电二极管光电二极管
页数	文件大小	规格书
2页	110K
描述
Photodiode-Chip

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数据手册

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EPC-880-0.5 数据手册

Photodiode-Chip

EPC-880-0.5

Preliminary

11.04.2007

Technology

rev. 04/07

Type

Electrodes

Wavelength range

Infrared, selective

Integrated filter

AlGaAs/GaAs

P (anode) up

460

typ. dimensions (µm)

360

300

typ. thickness

300 (±20) µm

Description

Infrared-selective photo-

diode with narrow

response range

anode

gold alloy, 1.5 µm

(810 - 950 nm)

cathode

gold alloy, 0.5 µm

Applications

Optical communications,

safety equipment, light

barriers

PD-02

Miscellaneous Parameters

T_amb= 25°C, unless otherwise specified

Parameter

Test сonditions

Symbol

Value

0.17

Unit

mm²

°C

Active area

T_amb

T_stg

Operating temperature range

Storage temperature range

-40 to +125

°C

Optical and Electrical Characteristics

T_amb= 25°C, unless otherwise specified

Test

Parameter

Symbol

I_D

Min

Typ

Max

2.5

Unit

conditions

V_R= 1 V

V_R= 0 V

V_R= 1 V

Dark current

1.0

λ_P

Peak sensitivity

A/W

890

λ_0.5

∆λ_0.5

S_λ

Spectral range at 50 %

820

935

Spectral bandwidth at 50%

115

0.25

Responsivity at λ_P

0.15

t_r,t_f

Switching time

15/30

¹Measured on bare chip on TO-18 header

Labeling

Typ. I_D[pA]

Type

Typ. S_λ[A/W]

Lot N°

Quantity

EPС-880-0.5

Packing: Chips on adhesive film with wire-bond side on top

*Note: All measurements carried out with EPIGAP equipment

EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201

1 of 2

Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545

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