Photodiode-Chip
EPC-880-0.9-1
Preliminary
23.05.2007
Technology
rev. 01/07
Type
Electrodes
Wavelength range
Infrared, selective
Integrated filter
GaAs
P (anode) up
typ. dimensions (µm)
860
typ. thickness
300 µm
Description
Infrared-selective photo-
diode with narrow
response range
anode
gold alloy, 1.5 µm
(810 - 950 nm)
cathode
gold alloy, 0.5 µm
Applications
Optical communications,
safety equipment, light
barriers
PD-08
Ø120
Miscellaneous Parameters
Tamb = 25°C, unless otherwise specified
Parameter
Test сonditions
Symbol
Value
Unit
Active area
A
0.72
mm²
°C
Tamb
Tstg
Operating temperature range
Storage temperature range
-40 to +125
-40 to +125
°C
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Test
Parameter
Symbol
Min
5
Typ
Max
Unit
conditions
Reverse voltage3
IR = 10 µA
VR
ID
V
VR = 1 V
VR = 0 V
VR = 0 V
VR = 0 V
VR = 0 V
VR = 0 V
Dark current
1.0
2.5
nA
λP
Peak sensitivity
890
nm
nm
A/W
A/W
nm
λ0.5
Sλ
Spectral range at 50 %
820
935
1
0.15
0.25
0.55
115
Responsivity at λP
2
Sλ
Responsivity at λP
∆λ0,5
Spectral bandwidth at 50%
1Measured on bare covered chip on TO-18 header
2Measured on epoxy covered chip on TO-18 header
3information only
Labeling
Typ. ID [pA]
Typ. Sλ[A/W]
Lot N°
Quantity
Type
EPС-880-0.9-1
Packing: Chips on adhesive film with wire-bond side on top
*Note: All measurements carried out with EPIGAP equipment
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 2
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545