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EPC-880-0.9-1 PDF预览

EPC-880-0.9-1

更新时间: 2024-02-03 08:15:39
品牌 Logo 应用领域
EPIGAP 光电二极管光电二极管
页数 文件大小 规格书
2页 110K
描述
Photodiode-Chip

EPC-880-0.9-1 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
风险等级:5.61Base Number Matches:1

EPC-880-0.9-1 数据手册

 浏览型号EPC-880-0.9-1的Datasheet PDF文件第2页 
Photodiode-Chip  
EPC-880-0.9-1  
Preliminary  
23.05.2007  
Technology  
rev. 01/07  
Type  
Electrodes  
Wavelength range  
Infrared, selective  
Integrated filter  
GaAs  
P (anode) up  
typ. dimensions (µm)  
860  
typ. thickness  
300 µm  
Description  
Infrared-selective photo-  
diode with narrow  
response range  
anode  
gold alloy, 1.5 µm  
(810 - 950 nm)  
cathode  
gold alloy, 0.5 µm  
Applications  
Optical communications,  
safety equipment, light  
barriers  
PD-08  
Ø120  
Miscellaneous Parameters  
Tamb = 25°C, unless otherwise specified  
Parameter  
Test сonditions  
Symbol  
Value  
Unit  
Active area  
A
0.72  
mm²  
°C  
Tamb  
Tstg  
Operating temperature range  
Storage temperature range  
-40 to +125  
-40 to +125  
°C  
Optical and Electrical Characteristics  
Tamb = 25°C, unless otherwise specified  
Test  
Parameter  
Symbol  
Min  
5
Typ  
Max  
Unit  
conditions  
Reverse voltage3  
IR = 10 µA  
VR  
ID  
V
VR = 1 V  
VR = 0 V  
VR = 0 V  
VR = 0 V  
VR = 0 V  
VR = 0 V  
Dark current  
1.0  
2.5  
nA  
λP  
Peak sensitivity  
890  
nm  
nm  
A/W  
A/W  
nm  
λ0.5  
Sλ  
Spectral range at 50 %  
820  
935  
1
0.15  
0.25  
0.55  
115  
Responsivity at λP  
2
Sλ  
Responsivity at λP  
λ0,5  
Spectral bandwidth at 50%  
1Measured on bare covered chip on TO-18 header  
2Measured on epoxy covered chip on TO-18 header  
3information only  
Labeling  
Typ. ID [pA]  
Typ. Sλ[A/W]  
Lot N°  
Quantity  
Type  
EPС-880-0.9-1  
Packing: Chips on adhesive film with wire-bond side on top  
*Note: All measurements carried out with EPIGAP equipment  
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201  
1 of 2  
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545  

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