Photodiode-Chip
EPC-440-2.5
Preliminary
11.04.2007
Technology
rev. 03/07
Type
Electrodes
Wavelength range
UV-blue-green
Schottky Contact
GaP
P (anode) up
typ. dimensions (µm)
2460
2400
2200
typ. thickness
300 µm
Description
High spectral sensitivity in
the blue and ultraviolet
range, low dark currents,
low cost chip with high
degradation stability
anode
bond gold 1.0 µm
cathode
Applications
special light barriers,
sensors for flame control
and automation
gold alloy, 0.5 µm
Miscellaneous Parameters
Tamb = 25°C, unless otherwise specified
Parameter
Test сonditions
Symbol
Value
Unit
Active area
A
4.8
mm²
%/K
°C
Temperature coefficient of ID
Operating temperature range
Storage temperature range
TC(ID)
Tamb
Tstg
7.0
-40 to +125
-40 to +125
°C
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Test
Parameter
Symbol
Min
Typ
Max
40
Unit
conditions
VR = 5 V
VR = 0 V
VR = 0 V
VR = 0 V
VR = 0 V
VR = 10 mV
ID
λp
Dark current
15
pA
nm
Peak sensitivity wavelength
Responsivity at λP*
440
0.17
Sλ
A/W
nm
λmin, λmax
∆λ0.5
RD
Sensitivity range at 1%
Spectral bandwidth at 50%
Shunt resistance
<110
80
570
180
100
nm
GΩ
1.3x10-14
W/ Hz
pF
Noise equivalent power
Junction capacitance
Switching time (RL = 50 ꢀ)
NEP
CJ
λ = 440 nm
VR = 0 V
1000
VR = 5 V
tr, tf
1/60
ns
*Measured on bare chip on TO-18 header
Labeling
Typ. ID [pA] Typ. Sλ[A/W]
Lot N°
Quantity
Type
EPC-440-2.5
Packing: Chips on adhesive film with wire-bond side on top
Note: All measurements carried out with EPIGAP equipment
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 2
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545