Datasheet > EPC-525-1.4

EPC-525-1.4

更新时间： 2024-12-01 06:57:43

品牌	Logo	应用领域
EPIGAP		光电二极管光电二极管
页数	文件大小	规格书
3页	142K
描述
Photodiode-Chip

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数据手册

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EPC-525-1.4 数据手册

Photodiode-Chip

EPC-525-1.4

Preliminary

11.04.2007

Technology

rev. 03/07

Type

Electrodes

Wavelength range

Green, selective

Integrated filter

GaP

P (anode) up

1360

typ. dimensions (µm)

1000

960

typ. thickness

270 (±20) µm

Description

Narrow bandwidth and

high spectral sensitivity in

the range of max. eye

responsivity (480…560

nm), low cost chip

anode

gold alloy, 1.5 µm

cathode

Applications

gold alloy, 0.5 µm

Nearly V

matched

detection, measurement

systems, daylight sensors

Ø100

PD-13

Miscellaneous Parameters

T_amb= 25°C, unless otherwise specified

Parameter

Test сonditions

Symbol

Value

1.79

Unit

mm²

°C

Active area

T_amb

T_stg

Operating temperature range

Storage temperature range

Temperature coefficient of I_D

Temperature coefficient of I_PH

Temperature coefficient of λ_c

-40 to +125

4.7

°C

TC_ID

TC_IPH

TC_λc

T = -40…120°C

%/K

nm/K

0.25

0.15

Optical and Electrical Characteristics

T_amb= 25°C, unless otherwise specified

Test

Parameter

Symbol

Min

Typ

Max

560

Unit

conditions

V_R= 0 V

λ_0.5

S_λ

Spectral range at 0.5 max.

480

0.04

0.15

Responsivity at 525 nm¹

V_R= 0 V

Responsivity at 525 nm²

V_R= 0 V

0.08

0.25

0.15

0.38

A/W

S_λ

V_R= 0 V

∆λ_0,5

I_D

Spectral bandwidth at 50%

Dark current (E_e= 0 W/m²)

V_R= 5 V

V_R= 0 V

λ_C

Central sensitivy wavelength

510

525

535

¹Measured on bare chip on TO-18 header

²Measured on epoxy covered chip on TO-18 header

Labeling

Typ. I_D[pA]

Typ. S_λ[A/W]

Lot N°

Quantity

Type

EPС-525-1.4

Packing: Chips on adhesive film with wire-bond side on top

*Note: All measurements carried out with EPIGAP equipment

EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201

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Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545

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