Photodiode-Chip
EPC-525-0.5-2
Preliminary
11.04.2007
Technology
rev. 03/07
Type
Electrodes
Wavelength range
Green, selective
Integrated filter
GaP
P (anode) up
430
Ø100
typ. dimensions (µm)
typ. thickness
270 (±20) µm
Description
Narrow bandwidth and
high spectral sensitivity in
the range of max. eye
responsivity (480…560
nm), low cost chip
anode
gold alloy, 1.5 µm
cathode
Applications
gold alloy, 0.5 µm
detection, measurement
systems, daylight sensors
Miscellaneous Parameters
Tamb = 25°C, unless otherwise specified
Parameter
Test сonditions
Symbol
Value
0.18
Unit
mm²
°C
Active area
A
Tamb
Tstg
Operating temperature range
Storage temperature range
Temperature coefficient of ID
Temperature coefficient of IPH
Temperature coefficient of λc
-40 to +125
-40 to +125
4.7
°C
TCID
TCIPH
TCλc
T = -40…120°C
T = -40…120°C
T = -40…120°C
%/K
%/K
nm/K
0.25
0.15
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Test
Parameter
Symbol
Min
Typ
Max
560
Unit
nm
conditions
VR = 0 V
λ0.5
Sλ
Spectral range at 0.5 max.
480
0.04
0.15
Responsivity at 525 nm1
VR = 0 V
Responsivity at 525 nm2
VR = 0 V
0.08
0.25
75
0.15
0.38
A/W
A/W
nm
Sλ
VR = 0 V
∆λ0,5
ID
Spectral bandwidth at 50%
Dark current (Ee = 0 W/m²)
VR = 5 V
5
30
pA
VR = 0 V
λC
Central sensitivy wavelength
510
525
535
nm
1Measured on bare chip on TO-18 header
2Measured on epoxy covered chip on TO-18 header
Labeling
Typ. ID [pA]
Typ. Sλ[A/W]
Lot N°
Quantity
Type
EPС-525-0.5-2
Packing: Chips on adhesive film with wire-bond side on top
*Note: All measurements carried out with EPIGAP equipment
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 3
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545