Photodiode-Chip
EPC-440-0.9
Preliminary
11.04.2007
Technology
rev. 04/07
Type
Electrodes
Wavelength range
UV-blue-green
Schottky Contact
GaP
P (anode) up
860
800
720
typ. dimensions (µm)
typ. thickness
300 µm
Description
High spectral sensitivity in
the blue and ultraviolet
range, low dark currents,
low cost chip with high
degradation stability
anode
gold alloy, 1.5 µm
cathode
Applications
special light barriers,
sensors for flame control
and automation
gold alloy, 0.5 µm
PD-03
Miscellaneous Parameters
Tamb = 25°C, unless otherwise specified
Parameter
Test сonditions
Symbol
Value
Unit
Active area
A
0.51
mm²
1/K
°C
Temperature coefficient of ID
Operating temperature range
Storage temperature range
TC(ID)
Tamb
Tstg
1.07
-40 to +125
-40 to +125
°C
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Test
Parameter
Symbol
Min
Typ
Max
20
Unit
conditions
VR = 5 V
VR = 0 V
VR = 0 V
VR = 0 V
VR = 0 V
VR = 10 mV
ID
λp
Dark current
5
pA
nm
Peak sensitivity wavelength
Responsivity at λP *
Sensitivity range at 1%
Spectral bandwidth at 50%
Shunt resistance
440
0.17
Sλ
A/W
nm
λmin, λmax
∆λ0.5
RD
<110
100
570
180
125
nm
GΩ
7.7x10-15
Noise equivalent power
Junction capacitance
Switching time
NEP
CJ
W/ Hz
pF
λ = 440 nm
VR = 0 V
120
VR = 5 V
tr, tf
0.7/13
ns
*Measured on bare chip on TO-18 header with EPIGAP equipment
Labeling
Typ. ID [pA] Typ. Sλ[A/W]
Type
Lot N°
Quantity
EPC-440-0.9
Packing: Chips on adhesive film with wire-bond side on top
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 2
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545