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EMZEA0P02Z PDF预览

EMZEA0P02Z

更新时间: 2024-09-10 17:15:27
品牌 Logo 应用领域
杰力科技 - EXCELLIANCE /
页数 文件大小 规格书
5页 193K
描述
WLCSP

EMZEA0P02Z 数据手册

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EMZEA0P02Z  
PChannel Logic Level Enhancement Mode Field Effect Transistor  
Product Summary:  
BVDSS  
16V  
100mΩ  
2.6A  
R
DSON (MAX.)  
ID  
PbFree Lead Plating & Halogen Free  
ESD Protection  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
SYMBOL  
LIMITS  
±8  
UNIT  
GateSource Voltage  
VGS  
V
TA = 25 °C  
2.6  
2.0  
10  
Continuous Drain Current  
ID  
TA = 70 °C  
A
Pulsed Drain Current1  
IDM  
TA = 25 °C  
1.3  
Power Dissipation  
PD  
W
°C  
TA = 70 °C  
0.84  
Operating Junction & Storage Temperature Range  
Tj, Tstg  
55 to 150  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
JunctiontoAmbient3  
SYMBOL  
TYPICAL  
MAXIMUM  
95  
UNIT  
°C / W  
RJA  
1Pulse width limited by maximum junction temperature.  
2Duty cycle 1%  
395°C / W when mounted on a 1 in2 pad of 2 oz copper.  
2015/9/2  
p.1  

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