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EMZF14R02W PDF预览

EMZF14R02W

更新时间: 2024-11-20 17:15:39
品牌 Logo 应用领域
杰力科技 - EXCELLIANCE /
页数 文件大小 规格书
5页 259K
描述
DFN3X3

EMZF14R02W 数据手册

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EMZF14R02W  
Dual NChannel Logic Level Enhancement Mode Field Effect Transistor  
Product Summary:  
BVDSS  
20V  
14mΩ  
9.5A  
R
DSON (MAX.)  
ID  
PbFree Lead Plating & Halogen Free  
ESD Protection  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
SYMBOL  
LIMITS  
±12  
9.5  
UNIT  
GateSource Voltage  
VGS  
V
TA = 25 °C  
Continuous Drain Current  
ID  
TA = 70 °C  
7.7  
A
Pulsed Drain Current1  
IDM  
40  
TA = 25 °C  
2.1  
Power Dissipation  
PD  
W
°C  
TA = 70 °C  
1.3  
Operating Junction & Storage Temperature Range  
Tj, Tstg  
55 to 150  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
SYMBOL  
TYPICAL  
MAXIMUM  
UNIT  
JunctiontoAmbient3 (t10s)  
RJA  
60  
°C / W  
JunctiontoAmbient3  
RJA  
105  
1Pulse width limited by maximum junction temperature.  
2Duty cycle 1%  
3The value of RJA is measured with the device mounted on a 1 in2 pad of 2 oz copper.  
2014/11/4  
p.1  

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