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EMZF20A02V PDF预览

EMZF20A02V

更新时间: 2024-11-05 17:15:35
品牌 Logo 应用领域
杰力科技 - EXCELLIANCE /
页数 文件大小 规格书
5页 185K
描述
EDFN3X3

EMZF20A02V 数据手册

 浏览型号EMZF20A02V的Datasheet PDF文件第2页浏览型号EMZF20A02V的Datasheet PDF文件第3页浏览型号EMZF20A02V的Datasheet PDF文件第4页浏览型号EMZF20A02V的Datasheet PDF文件第5页 
EMZF20A02V  
Dual NChannel Logic Level Enhancement Mode Field Effect Transistor  
Product Summary:  
BVDSS  
20V  
20mΩ  
6A  
R
DSON (MAX.)  
ID  
PbFree Lead Plating & Halogen Free  
ESD Protection  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
SYMBOL  
LIMITS  
±12  
6
UNIT  
GateSource Voltage  
VGS  
V
TA = 25 °C  
Continuous Drain Current  
ID  
TA = 70 °C  
4
A
Pulsed Drain Current1  
IDM  
24  
TA = 25 °C  
2.27  
Power Dissipation  
PD  
W
°C  
TA = 70 °C  
1.45  
Operating Junction & Storage Temperature Range  
Tj, Tstg  
55 to 150  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
SYMBOL  
RJC  
TYPICAL  
MAXIMUM  
UNIT  
JunctiontoCase  
JunctiontoAmbient3  
7.5  
55  
°C / W  
RJA  
1Pulse width limited by maximum junction temperature.  
2Duty cycle 1%  
355°C / W when mounted on a 1 in2 pad of 2 oz copper.  
2013/10/21  
p.1  

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