Datasheet > EM6K18000

EM6K18000

更新时间： 2024-09-17 22:30:35

品牌	Logo	应用领域
罗姆 - ROHM		开关
页数	文件大小	规格书
4页	86K
描述
Small switching (30V, 0.1A)

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中文翻译

获取价格

数据手册

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EM6K18000 数据手册

EM6K1

Transistor

Small switching (30V, 0.1A)

EM6K1

!External dimensions (Units : mm)

!Features

1) Two 2SK3019 transistors in a single EMT package.

2) The MOSFET elements are independent, eliminating

interference.

3) Mounting cost and area can be cut in half.

4) Low on-resistance.

EMT6

( )

1.2

1.6

5) Low voltage drive (2.5V) makes this device ideal for

portable equipment.

Each lead has same dimensions

Abbreviated symbol : K1

!Applications

Interfacing, switching (30V, 100mA)

!Equivalent circuit

Gate

!Structure

Silicon N-channel

MOSFET

(6)

(5)

(4)

Protection

Diode

∗

Tr1

!Packaging specifications

Package

Code

Taping

T2R

Tr2

(1)Tr1 Source

(2)Tr1 Gate

(3)Tr2 Drain

(4)Tr2 Source

(5)Tr2 Gate

(6)Tr1 Drain

Basic ordering unit

(pieces)

Type

8000

∗

Gate

Protection

Diode

(1)

(2)

(3)

EM6K1

∗ A protection diode has been built in between the gate and

the source to protect against static electricity when the product

is in use. Use the protection circuit when rated voltages are exceeded.

!Absolute maximum ratings (Ta=25°C)

Parameter

Drain−source voltage

Gate−source voltage

Symbol

Limits

Unit

DSS

GSS

Continuous

Pulsed

100

400

100

400

Drain current

∗

Continuous

Pulsed

Reverse drain current

DRP

∗

mW/TOTAL

120mW/1ELEMENT

Total power dissipation (Tc=25°C)

150

Channel temperature

Storage temperature

Tch

150

°C

Tstg

−55~+150

∗1 Pw≤10µs, Duty cycle≤1%

∗2 With each pin mounted on the recommended lands.

12 3 4

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