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EM6K33T2R PDF预览

EM6K33T2R

更新时间: 2024-09-18 20:03:07
品牌 Logo 应用领域
罗姆 - ROHM 开关光电二极管晶体管
页数 文件大小 规格书
6页 144K
描述
Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EMT6, 6 PIN

EM6K33T2R 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:16 weeks
风险等级:1.67配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:50 V最大漏极电流 (Abs) (ID):0.2 A
最大漏极电流 (ID):0.2 A最大漏源导通电阻:2.4 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-F6
JESD-609代码:e2湿度敏感等级:1
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:TIN COPPER
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

EM6K33T2R 数据手册

 浏览型号EM6K33T2R的Datasheet PDF文件第2页浏览型号EM6K33T2R的Datasheet PDF文件第3页浏览型号EM6K33T2R的Datasheet PDF文件第4页浏览型号EM6K33T2R的Datasheet PDF文件第5页浏览型号EM6K33T2R的Datasheet PDF文件第6页 
1.2V Drive Nch + Nch MOSFET  
EM6K33  
Structure  
Dimensions (Unit : mm)  
ilicon N-channel MOSFET  
Features  
1) High speed switing.  
2) Small package(EMT6).  
3) Ultra low voltage drive(1.2V drive).  
Application  
Switching  
Abbreviated symbol : K33  
Packaging specifications  
Inner circuit  
Package  
Taping  
T2R  
8000  
(6)  
(5)  
(4)  
Type  
Code  
1  
Basic ordering unit (pieces)  
EM6K33  
2  
2  
(1) Tr1 Source  
(2) Tr1 Gate  
(3) Tr2 Drain  
(4) Tr2 Source  
(5) Tr2 Gate  
(6) Tr1 Drain  
1  
(1)  
(2)  
(3)  
1 ESD PROTECTION DIODE  
2 BODY DIODE  
Absolute maximum ratings (Ta = 25C)  
Parameter  
Drain-source voltage  
Symbol  
VDSS  
VGSS  
ID  
Limits  
50  
Unit  
V
Gate-source voltage  
8  
V
Continuous  
Pulsed  
200  
800  
125  
800  
150  
120  
150  
mA  
mA  
mA  
mA  
Drain current  
*1  
IDP  
Is  
Continuous  
Pulsed  
Source current  
(Body Diode)  
*1  
*2  
Isp  
mW / TOTAL  
PD  
Power dissipation  
mW / ELEMENT  
Channel temperature  
Tch  
C  
C  
Range of storage temperature  
*1 Pw10s, Duty cycle1%  
Tstg  
55 to +150  
*2 Each terminal mounted on a recommended land.  
Thermal resistance  
Parameter  
Symbol  
Limits  
Unit  
*
833  
°C / W /TOTAL  
Channel to ambient  
Rth (ch-a)  
1042  
°C / W /ELEMENT  
* Each terminal mounted on a recommended land.  
www.rohm.com  
2010.03 - Rev.B  
1/5  
c
2010 ROHM Co., Ltd. All rights reserved.  

EM6K33T2R 替代型号

型号 品牌 替代类型 描述 数据表
UM6K33NTN ROHM

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Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 2-Element, N-Channel, Silicon, Metal

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