Datasheet > EM6K6

EM6K6

更新时间： 2024-01-16 03:27:24

品牌	Logo	应用领域
罗姆 - ROHM		驱动
页数	文件大小	规格书
4页	103K
描述
1.8V Drive Nch+Nch MOSFET

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中文翻译

获取价格

数据手册

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EM6K6 数据手册

EM6K6

Transistor

1.8V Drive Nch+Nch MOSFET

EM6K6

zStructure

zDimensions (Unit : mm)

Silicon N-channel

MOSFET

EMT6

zApplications

Switching

zFeatures

Each lead has same dimensions

Abbreviated symbol : K06

1) The MOSFET elements are independent,

eliminating mutual interference.

2) Mounting cost and area can be cut in half.

3) Low on-resistance.

4) Low voltage drive (1.8V) makes this device ideal for

portable equipment.

zPackaging specifications

zEquivalent circuit

Gate

(6)

(5)

(4)

Protection

Diode

∗

Package

Code

Taping

T2R

Type

Tr1

Basic ordering unit

(pieces)

8000

EM6K6

Tr2

(1)Tr1 Source

(2)Tr1 Gate

(3)Tr2 Drain

(4)Tr2 Source

(5)Tr2 Gate

(6)Tr1 Drain

∗

Gate

zAbsolute maximum ratings (Ta=25°C)

Protection

Diode

(1)

(2)

(3)

∗ A protection diode has been built in between the gate and

the source to protect against static electricity when the product

Parameter

Drain−source voltage

Gate−source voltage

Symbol

Limits

Unit

is in use. Use the protection circuit when rated voltages are exceeded.

VDSS

GSS

Continuous

Pulsed

300

600

Drain current

∗

150

120

mW / TOTAL

Total power dissipation

mW / ELEMENT

Channel temperature

Storage temperature

Tch

150

°C

Tstg

−55 to +150

∗

1 Pw≤10µs, Duty cycle≤1%

2 Each terminal mounted on a recommended land.

zThermal resistance

Parameter

Symbol

Limits

833

Unit

°C/W / TOTAL

°C/W / ELEMENT

∗

Channel to ambient

Rth(ch-a)

1042

∗ Each terminal mounted on a recommended land

1/3

12 3 4

中文翻译

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