Datasheet > EIC1010A-12

EIC1010A-12

更新时间： 2024-02-06 14:45:45

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
2页	87K
描述
10.0-10.25 GHz 12-Watt Internally Matched Power FET

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EIC1010A-12 数据手册

EIC1010A-12

ISSUED: 07/24/2007

10.0-10.25 GHz 12-Watt Internally Matched Power FET

Excelics

EIC1010A-12

.024

.827±.010 .669

.120 MIN

.421

FEATURES

•

10.0-10.25GHz Bandwidth

.120 MIN

YYWW

Input/Output Impedance Matched to 50 Ohms

+40.5dBm Output Power at 1dB Compression

7.0 dB Power Gain at 1dB Compression

30% Power Added Efficiency

.004

.125

.063

.508±.008

.442

.004

.105±.008

Hermetic Metal Flange Package

.168±.010

ALL DIMENSIONS IN INCHES

Caution! ESD sensitive device.

ELECTRICAL CHARACTERISTICS (T_a= 25°C)

SYMBOL

P_1dB

PARAMETERS/TEST CONDITIONS¹

MIN

TYP

MAX

UNITS

Output Power at 1dB Compression

_DS= 9 V, I_DSQ≈ 3200mA

f = 10.0-10.25GHz

39.5

6.0

40.5

dBm

Gain at 1dB Compression

V_DS= 9 V, I_DSQ≈ 3200mA

Gain Flatness

f = 10.0-10.25GHz

7.0

G_1dB

±0.5

∆G

_DS= 9 V, I_DSQ≈ 3200mA

Power Added Efficiency at 1dB Compression

PAE

Id_1dB

V_DS= 9 V, I_DSQ≈ 3200mA

f = 10.0-10.25GHz

Drain Current at 1dB Compression

3300

3700

Output 3rd Order Intermodulation Distortion

∆f=10MHz 2-Tone Test. Pout=28.5 dBm S.C.L

-40

-43

dBc

IM3

Vds = 9 V, I_DSQ≈ 65% I_DSS

f = 10.25GHz

Saturated Drain Current

V_DS= 3 V, V_GS= 0 V

5800

-2.5

2.3

7200

-4.0

2.6

^oC/W

I_DSS

V_P

Pinch-off Voltage

Thermal Resistance³

V_DS= 3 V, I_DS= 58 mA

R_TH

Note: 1) Tested with 50 Ohm gate resistor.

2) S.C.L. = Single Carrier Level.

3) Overall Rth depends on case mounting.

ABSOLUTE MAXIMUM RATING^1,2

SYMBOLS

PARAMETERS

Drain-Source Voltage

ABSOLUTE¹

CONTINUOUS²

10V

-4V

-5

Vds

Gate-Source Voltage

Forward Gate Current

Reverse Gate Current

Input Power

Vgs

130mA

-21mA

43mA

Igsf

-7mA

Igsr

40.0dBm

175 ^oC

-65 to +175 ^oC

@ 3dB Compression

175 ^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

Tch

-65 to +175 ^oC

Tstg

57W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

page 1 of 2

Revised July 2007

中文翻译

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与EIC1010A-12相关器件

型号	品牌	获取价格	描述	数据表
EIC1010A-20	EXCELICS	获取价格	10.00-10.25 GHz 20-Watt Internally Matched Power FET
EIC1010A-8	EXCELICS	获取价格	10.00-10.25 GHz 8-Watt Internally Matched Power FET
EIC1011-12	EXCELICS	获取价格	10.7-11.7 GHz 12-Watt Internally Matched Power FET
EIC1011-4	EXCELICS	获取价格	10.70-11.70GHz 4-Watt Internally-Matched Power FET
EIC1011-8	EXCELICS	获取价格	10.70-11.70GHz 8-Watt Internally Matched Power FET
EIC1012-12	EXCELICS	获取价格	10.95-12.75 GHz 12-Watt Internally Matched Power FET
EIC1112-5	EXCELICS	获取价格	11.7-12.7 GHz 5-Watt Internally Matched Power FET
EIC1112-8	EXCELICS	获取价格	11.7-12.7 GHz 8-Watt Internally Matched Power FET
EIC1212-4	EXCELICS	获取价格	12.20-12.70 GHz 4-Watt Internally Matched Power FET
EIC1212-8	EXCELICS	获取价格	12.20-12.70 GHz 8-Watt Internally Matched Power FET

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