Datasheet > EIC1011-12

EIC1011-12

更新时间： 2024-02-02 10:07:50

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
2页	97K
描述
10.7-11.7 GHz 12-Watt Internally Matched Power FET

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EIC1011-12 数据手册

EIC1011-12

UPDATED 07/25/2007

10.7-11.7 GHz 12-Watt Internally Matched Power FET

FEATURES

•

10.7–11.7GHz Bandwidth

Input/Output Impedance Matched to 50 Ohms

+40.5 dBm Output Power at 1dB Compression

6.0 dB Power Gain at 1dB Compression

27% Power Added Efficiency

-46 dBc IM3 at PO = 28.5 dBm SCL

100% Tested for DC, RF, and R_TH

ELECTRICAL CHARACTERISTICS (T_a= 25°C)

SYMBOL

P_1dB

PARAMETERS/TEST CONDITIONS¹

MIN

TYP

MAX

UNITS

Output Power at 1dB Compression

_DS= 10 V, I_DSQ≈ 3200mA

f = 10.7-11.7GHz

39.5

40.5

dBm

Gain at 1dB Compression

V_DS= 10 V, I_DSQ≈ 3200mA

Gain Flatness

f = 10.7-11.7GHz

5.0

6.0

G_1dB

∆G

±0.6

V_DS= 10 V, I_DSQ≈ 3200mA

Power Added Efficiency at 1dB Compression

V_DS= 10 V, I_DSQ≈ 3200mA

PAE

Id_1dB

f = 10.7-11.7GHz

Drain Current at 1dB Compression

3300

3700

Output 3rd Order Intermodulation Distortion

∆f=10MHz 2-Tone Test. Pout=28.5 dBm S.C.L

-43

-46

dBc

IM3

Vds = 10 V, I_DSQ≈ 65% I_DSS

f = 11.7GHz

Saturated Drain Current

V_DS= 3 V, V_GS= 0 V

5800

-2.5

2.3

7200

-4.0

2.6

I_DSS

V_P

Pinch-off Voltage

V_DS= 3 V, I_DS= 58 mA

Thermal Resistance³

^oC/W

R_TH

Note: 1. Tested with 50 Ohm gate resistor.

2. S.C.L. = Single Carrier Level.

3. Overall Rth depends on case mounting.

ABSOLUTE MAXIMUM RATING^1,2

SYMBOLS

PARAMETERS

ABSOLUTE¹

CONTINUOUS²

Drain-Source Voltage

Gate-Source Voltage

Forward Gate Current

Reserve Gate Current

Input Power

10V

-4V

Vds

-5

Vgs

130mA

-21mA

43mA

Igsf

-7mA

Igsr

40.0dBm

175 ^oC

-65 to +175 ^oC

@ 3dB Compression

175 ^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

Tch

-65 to +175 ^oC

Tstg

57W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

page 1 of 2

Revised July 2007

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