Datasheet > EIC1212-4

EIC1212-4

更新时间： 2024-02-03 09:41:19

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
2页	118K
描述
12.20-12.70 GHz 4-Watt Internally Matched Power FET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

EIC1212-4 数据手册

EIC1212-4

ISSUED DATE: 09/20//2007

12.20-12.70 GHz 4-Watt Internally Matched Power FET

FEATURES

•

12.20-12.70GHz Bandwidth

Input/Output Impedance Matched to 50 Ohms

+36.5 dBm Output Power at 1dB Compression

6.5dB Power Gain at 1dB Compression

28% Power Added Efficiency

-46 dBc IM3 at PO = 25.5 dBm SCL

100% Tested for DC, RF, and R_TH

Caution! ESD sensitive device.

ELECTRICAL CHARACTERISTICS (T_a= 25°C)

SYMBOL

P_1dB

PARAMETERS/TEST CONDITIONS¹

MIN

TYP

MAX

UNITS

Output Power at 1dB Compression

_DS= 10 V, I_DSQ≈ 1100mA

f = 12.20-12.70GHz

35.5

36.5

dBm

Gain at 1dB Compression

V_DS= 10 V, I_DSQ≈ 1100mA

Gain Flatness

f = 12.20-12.70GHz

5.5

6.5

G_1dB

±0.6

∆G

V_DS= 10 V, I_DSQ≈ 1100mA

Power Added Efficiency at 1dB Compression

PAE

Id_1dB

V_DS= 10 V, I_DSQ≈ 1100mA

f = 12.20-12.70GHz

Drain Current at 1dB Compression

1100

1300

Output 3rd Order Intermodulation Distortion

∆f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L²

-43

-46

dBc

IM3

V_DS= 10 V, I_DSQ≈ 65% IDSS

f = 12.70GHz

Saturated Drain Current

V_DS= 3 V, V_GS= 0 V

2000

-2.5

5.5

2500

-4.0

6.0

^oC/W

I_DSS

V_P

Pinch-off Voltage

Thermal Resistance³

V_DS= 3 V, I_DS= 20 mA

R_TH

Note: 1. Tested with 100 Ohm gate resistor.

2. S.C.L. = Single Carrier Level.

3. Overall Rth depends on case mounting.

ABSOLUTE MAXIMUM RATING^1,2

SYMBOLS

PARAMETERS

ABSOLUTE¹

15V

CONTINUOUS²

10V

Drain-Source Voltage

Gate-Source Voltage

Forward Gate Current

Reverse Gate Current

Input Power

Vds

-5V

-4V

Vgs

48mA

14.4mA

Igsf

-9.6mA

35.5dBm

175C

-2.4mA

Igsr

@ 3dB Compression

175C

Channel Temperature

Storage Temperature

Total Power Dissipation

Tch

-65C to +175C

25W

Tstg

25W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

page 1 of 2

Revised October 2007

中文翻译

下载PDF

与EIC1212-4相关器件

型号	品牌	获取价格	描述	数据表
EIC1212-8	EXCELICS	获取价格	12.20-12.70 GHz 8-Watt Internally Matched Power FET
EIC1213-12	EXCELICS	获取价格	12.75-13.25 GHz 12-Watt Internally Matched Power FET
EIC1213-4	EXCELICS	获取价格	12.70-13.20GHz 4-Watt Internally-Matched Power FET
EIC1213-8	EXCELICS	获取价格	12.75-13.25 GHz 8-Watt Internally Matched Power FET
EIC1314-12	EXCELICS	获取价格	13.75-14.50 GHz 12-Watt Internally Matched Power FET
EIC1314-2	EXCELICS	获取价格	13.75-14.50GHz 2-Watt Internally-Matched Power FET
EIC1314-4	EXCELICS	获取价格	13.75-14.50GHz 4-Watt Internally-Matched Power FET
EIC1314-7	EXCELICS	获取价格	13.75-14.50 GHz 7-Watt Internally Matched Power FET
EIC1314-8	EXCELICS	获取价格	13.75-14.5 GHz 8-Watt Internally Matched Power FET
EIC1414-12	EXCELICS	获取价格	14.0-14.5 GHz 12-Watt Internally Matched Power FET