Datasheet > EIC1212-8

EIC1212-8

更新时间： 2024-01-21 23:06:02

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
1页	85K
描述
12.20-12.70 GHz 8-Watt Internally Matched Power FET

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EIC1212-8 数据手册

EIC1212-8

UPDATED 01/04/2006

12.20-12.70 GHz 8-Watt Internally Matched Power FET

Excelics

EIC1212-8

.024

FEATURES

.827±.010 .669

.120 MIN

.421

•

12.20– 12.70GHz Bandwidth

.120 MIN

YYWW

Input/Output Impedance Matched to 50 Ohms

+39.0 dBm Output Power at 1dB Compression

6.5 dB Power Gain at 1dB Compression

27% Power Added Efficiency

-46 dBc IM3 at PO = 28.5 dBm SCL

Hermetic Metal Flange Package

.004

.125

.063

.508±.008

.442

.004

.105±.008

.168±.010

100% Tested for DC, RF, and R_TH

ALL DIMENSIONS IN INCHES

Caution! ESD sensitive device.

ELECTRICAL CHARACTERISTICS (T_a= 25°C)

SYMBOL

P_1dB

PARAMETERS/TEST CONDITIONS¹

MIN

TYP

MAX

UNITS

Output Power at 1dB Compression

_DS= 10 V, I_DSQ≈ 2200mA

f = 12.20-12.70GHz

38.5

39.0

dBm

Gain at 1dB Compression

V_DS= 10 V, I_DSQ≈ 2200mA

Gain Flatness

f = 12.20-12.70GHz

5.5

6.5

G_1dB

±0.6

∆G

V_DS= 10 V, I_DSQ≈ 2200mA

Power Added Efficiency at 1dB Compression

PAE

Id_1dB

V_DS= 10 V, I_DSQ≈ 2200mA

f = 12.20-12.70GHz

Drain Current at 1dB Compression

2300

2600

Output 3rd Order Intermodulation Distortion

∆f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L²

-43

-46

dBc

IM3

V_DS= 10 V, I_DSQ≈ 65% IDSS

f = 12.70GHz

Saturated Drain Current

V_DS= 3 V, V_GS= 0 V

4000

-2.5

3.5

5000

-4.0

4.0

^oC/W

I_DSS

V_P

Pinch-off Voltage

Thermal Resistance³

V_DS= 3 V, I_DS= 40 mA

R_TH

Note: 1) Tested with 100 Ohm gate resistor.

2) S.C.L. = Single Carrier Level.

3) Overall Rth depends on case mounting.

ABSOLUTE MAXIMUM RATING^1,2

SYMBOL

CHARACTERISTIC

VALUE

V_DS

V_GS

I_DS

Drain to Source Voltage

10 V

-4.5 V

Gate to Source Voltage

Drain Current

IDSS

I_GSF

P_IN

Forward Gate Current

Input Power

80 mA

@ 3dB compression

38 W

P_T

Total Power Dissipation

Channel Temperature

Storage Temperature

T_CH

T_STG

175°C

-65/+175°C

Notes:

Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.

Bias conditions must also satisfy the following equation P_T< (T_CH–T_PKG)/R_TH; where T_PKG= temperature of package, and P_T= (V_DS* I_DS) – (P_OUT– P_IN).

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

page 1 of 1

Revised January 2006

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

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与EIC1212-8相关器件

型号	品牌	获取价格	描述	数据表
EIC1213-12	EXCELICS	获取价格	12.75-13.25 GHz 12-Watt Internally Matched Power FET
EIC1213-4	EXCELICS	获取价格	12.70-13.20GHz 4-Watt Internally-Matched Power FET
EIC1213-8	EXCELICS	获取价格	12.75-13.25 GHz 8-Watt Internally Matched Power FET
EIC1314-12	EXCELICS	获取价格	13.75-14.50 GHz 12-Watt Internally Matched Power FET
EIC1314-2	EXCELICS	获取价格	13.75-14.50GHz 2-Watt Internally-Matched Power FET
EIC1314-4	EXCELICS	获取价格	13.75-14.50GHz 4-Watt Internally-Matched Power FET
EIC1314-7	EXCELICS	获取价格	13.75-14.50 GHz 7-Watt Internally Matched Power FET
EIC1314-8	EXCELICS	获取价格	13.75-14.5 GHz 8-Watt Internally Matched Power FET
EIC1414-12	EXCELICS	获取价格	14.0-14.5 GHz 12-Watt Internally Matched Power FET
EIC1414-2	EXCELICS	获取价格	14.00-14.50GHz 2-Watt Internally-Matched Power FET

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