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EIC1010A-20 PDF预览

EIC1010A-20

更新时间: 2024-02-24 03:32:37
品牌 Logo 应用领域
EXCELICS /
页数 文件大小 规格书
2页 88K
描述
10.00-10.25 GHz 20-Watt Internally Matched Power FET

EIC1010A-20 数据手册

 浏览型号EIC1010A-20的Datasheet PDF文件第2页 
EIC1010A-20  
ISSUED 07/03/2007  
10.00-10.25 GHz 20-Watt Internally Matched Power FET  
FEATURES  
10.00– 10.25GHz Bandwidth  
Input/Output Impedance Matched to 50 Ohms  
+42.5 dBm Output Power at 1dB Compression  
6.0 dB Power Gain at 1dB Compression  
27% Power Added Efficiency  
Excelics  
EIC1010A-20  
.024  
.945 .803  
.079 MIN  
.079 MIN  
YYWW  
Hermetic Metal Flange Package  
100% Tested for DC, RF, and RTH  
SN  
.315  
.685  
.617  
.004  
.168  
.095  
.055  
ALL DIMENSIONS IN INCHES  
Caution! ESD sensitive device.  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
SYMBOL  
PARAMETERS/TEST CONDITIONS1  
MIN  
TYP  
MAX  
UNITS  
Output Power at 1dB Compression  
DS = 9 V, IDSQ 4000mA  
Gain at 1dB Compression  
DS = 9 V, IDSQ 4000mA  
Gain Flatness  
VDS = 9 V, IDSQ 4000mA  
f = 10.00-10.25GHz  
41.5  
42.5  
dBm  
P1dB  
V
f = 10.00-10.25GHz  
f = 10.00-10.25GHz  
5.5  
6.5  
dB  
dB  
%
G1dB  
G  
V
±0.5  
Power Added Efficiency at 1dB Compression  
27  
PAE  
VDS = 9 V, IDSQ 4000mA  
f = 10.00-10.25GHz  
Drain Current at 1dB Compression  
f = 10.00-10.25GHz  
5500  
14000  
-2.5  
6500  
18000  
-4.0  
mA  
mA  
V
Id1dB  
IDSS  
VP  
Saturated Drain Current  
Pinch-off Voltage  
VDS = 3 V, VGS = 0 V  
VDS = 3 V, IDS = 140 mA  
Thermal Resistance2  
1.4  
1.6  
oC/W  
RTH  
Note: 1) Tested with 25 Ohm gate resistor.  
2) Overall Rth depends on case mounting.  
MAXIMUM RATING (Case Temperature 25 ºC)  
SYMBOL  
VDS  
CHARACTERISTIC  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current  
ABSOLUTE1  
CONTINUOUS2  
10 V  
15V  
-5V  
VGS  
-3.0 V  
IDS  
IDSS  
9400mA  
IGSF  
Forward Gate Current  
Input Power  
3000mA  
42.5 dBm  
110W  
500 mA  
PIN  
@ 3dB compression  
94 W  
PT  
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
TCH  
175°C  
175°C  
TSTG  
-65°C ~ 175°C  
-65°C ~ 175°C  
Notes: 1. Exceeding any of the above ratings may result in permanent damage.  
2. Exceeding any of the above ratings may reduce MTTF below design goals.  
Specifications are subject to change without notice.  
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085  
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com  
page 1 of 2  
Revised July 2007  

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