Datasheet > EIC0910-12

EIC0910-12

更新时间： 2022-12-18 00:31:46

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
2页	86K
描述
9.50-10.50 GHz 12-Watt Internally Matched Power FET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

EIC0910-12 数据手册

EIC0910-12

UPDATED 03/07/2008

9.50-10.50 GHz 12-Watt Internally Matched Power FET

Excelics

FEATURES

.024

EIC0910-12

•

9.50–10.50GHz Bandwidth

.827±.010 .669

.120 MIN

.421

Input/Output Impedance Matched to 50 Ohms

+40.5 dBm Output Power at 1dB Compression

7.0 dB Power Gain at 1dB Compression

30% Power Added Efficiency

-46 dBc IM3 at PO = 28.5 dBm SCL

100% Tested for DC, RF, and R_TH

.120 MIN

YYWW

.004

.125

.063

.508±.008

.442

.004

.105±.008

.168±.010

ALL DIMENSIONS IN INCHES

Caution! ESD sensitive device.

ELECTRICAL CHARACTERISTICS (T_a= 25°C)

SYMBOL

P_1dB

PARAMETERS/TEST CONDITIONS¹

MIN

TYP

MAX

UNITS

Output Power at 1dB Compression

_DS= 10 V, I_DSQ≈ 3200Ma

f = 9.50-10.50GHz

39.5

40.5

dBm

Gain at 1dB Compression

V_DS= 10 V, I_DSQ≈ 3200mA

Gain Flatness

V_DS= 10 V, I_DSQ≈ 3200mA

Power Added Efficiency at 1dB Compression

f = 9.50-10.50GHz

6.0

7.0

G_1dB

∆G

±0.6

PAE

Id_1dB

V_DS= 10 V, I_DSQ≈ 3200mA

f = 9.50-10.50GHz

Drain Current at 1dB Compression

f = 9.50-10.50GHz

3300

4200

Output 3rd Order Intermodulation Distortion

∆f=10MHz 2-Tone Test. Pout=28.5 dBm S.C.L

-43

-46

dBc

IM3

Vds = 10 V, I_DSQ≈ 65% I_DSS

f = 10.50GHz

Saturated Drain Current

V_DS= 3 V, V_GS= 0 V

6500

-2.5

2.3

9000

-4.0

2.6

I_DSS

V_P

Pinch-off Voltage

V_DS= 3 V, I_DS= 58 mA

Thermal Resistance³

^oC/W

R_TH

Note: 1. Tested with 50 Ohm gate resistor.

2. S.C.L. = Single Carrier Level.

3. Overall Rth depends on case mounting.

ABSOLUTE MAXIMUM RATING^1,2

SYMBOLS

PARAMETERS

ABSOLUTE¹

CONTINUOUS²

Drain-Source Voltage

Gate-Source Voltage

Forward Gate Current

Reverse Gate Current

Input Power

-5

10V

-4V

Vds

Vgs

130mA

-21mA

43mA

Igsf

-7mA

Igsr

40.0dBm

175 ^oC

-65 to +175 ^oC

@ 3dB Compression

175 ^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

Tch

-65 to +175 ^oC

Tstg

57W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

page 1 of 2

Revised March 2008

中文翻译

下载PDF

与EIC0910-12相关器件

型号	品牌	获取价格	描述	数据表
EIC0910-2	EXCELICS	获取价格	9.50-10.50GHz 2-Watt Internally-Matched Power FET
EIC0910-25	EXCELICS	获取价格	9.50-10.50 GHz 25-Watt Internally Matched Power FET
EIC0910-4	EXCELICS	获取价格	9.50-10.50GHz 4-Watt Internally-Matched Power FET
EIC0910-5	EXCELICS	获取价格	9.50-10.50GHz,5W Internally Matched Power FET
EIC0910-8	EXCELICS	获取价格	9.50-10.50GHz 8-Watt Internally Matched Power FET
EIC0910A-8	EXCELICS	获取价格	9.20-10.00 GHz 8-Watt Internally Matched Power FET
EIC1010-25	EXCELICS	获取价格	10.0-10.25 GHz 25-Watt Internally Matched Power FET
EIC1010-4	EXCELICS	获取价格	10.0-10.70GHz 4-Watt Internally-Matched Power FET
EIC1010-8	EXCELICS	获取价格	10.00-10.70 GHz 8-Watt Internally Matched Power FET
EIC1010A-12	EXCELICS	获取价格	10.0-10.25 GHz 12-Watt Internally Matched Power FET

与EIC0910-12相关文章

晶闸管阳极与阴极之间加电压时控制极的电流流动分析
2024-06-05

10
探究MOS管沟道夹断后载流子传输机制及其电路设计影响
2024-06-05

9
光敏电阻的工作原理、作用及检测方法
2024-06-05

8
ENC28J60以太网控制器全面解析：特性、应用、引脚说明
2024-06-05

6

产品中心

服务支持

精选活动

关于我们

帮助中心

EIC0910-12

EIC0910-12 数据手册

与EIC0910-12相关器件

与EIC0910-12相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

EIC0910-12

EIC0910-12 数据手册

与EIC0910-12相关器件

与EIC0910-12相关文章

您还可以找

您在本页遇到什么问题？