Datasheet > EIC1010-8

EIC1010-8

更新时间： 2024-01-24 03:13:09

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
1页	88K
描述
10.00-10.70 GHz 8-Watt Internally Matched Power FET

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EIC1010-8 数据手册

EIC1010-8

UPDATED 02/15/2005

10.00-10.70 GHz 8-Watt Internally Matched Power FET

FEATURES

Excelics

EIC1010-8

•

10.00– 10.70GHz Bandwidth

Input/Output Impedance Matched to 50 Ohms

+39.5 dBm Output Power at 1dB Compression

7.0 dB Power Gain at 1dB Compression

31% Power Added Efficiency

-46 dBc IM3 at Po = 28.5 dBm SCL

Hermetic Metal Flange Package

100% Tested for DC, RF, and R_TH

Caution! ESD sensitive device.

ELECTRICAL CHARACTERISTICS (T_a= 25°C)

SYMBOL

P_1dB

PARAMETERS/TEST CONDITIONS¹

Output Power at 1dB Compression f = 10.00-10.70GHz

MIN

TYP

MAX

UNITS

38.5

39.5

dBm

V_DS= 10 V, I_DSQ≈ 2200mA

Gain at 1dB Compression

_DS= 10 V, I_DSQ≈ 2200mA

Gain Flatness

_DS= 10 V, I_DSQ≈ 2200mA

Power Added Efficiency at 1dB Compression

f = 10.00-10.70GHz

G_1dB

6.0

7.0

f = 10.00-10.70GHz

±0.6

∆G

PAE

Id_1dB

V_DS= 10 V, I_DSQ≈ 2200mA

f = 10.00-10.70GHz

Drain Current at 1dB Compression f = 10.00-10.70GHz

2300

2600

Output 3rd Order Intermodulation Distortion

IM3

∆f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L²

-43

-46

dBc

V_DS= 10 V, I_DSQ≈ 65% IDSS

f = 10.70 GHz

I_DSS

V_P

Saturated Drain Current

V_DS= 3 V, V_GS= 0 V

4000

-2.5

3.5

5000

-4.0

4.0

^oC/W

Pinch-off Voltage

Thermal Resistance³

_DS= 3 V, I_DS= 40 mA

R_TH

1) Tested with 100 Ohm gate resistor.

2) S.C.L. = Single Carrier Level.

3) Overall Rth depends on case mounting.

ABSOLUTE MAXIMUM RATING^1,2

SYMBOL

CHARACTERISTIC

VALUE

V_DS

V_GS

I_DS

Drain to Source Voltage

10 V

-4.5 V

Gate to Source Voltage

Drain Current

IDSS

I_GSF

P_IN

Forward Gate Current

Input Power

80 mA

@ 3dB compression

38 W

P_T

Total Power Dissipation

Channel Temperature

Storage Temperature

T_CH

T_STG

175°C

-65/+175°C

Notes:

Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.

Bias conditions must also satisfy the following equation P_T< (T_CH–T_PKG)/R_TH; where T_PKG= temperature of package, and P_T= (V_DS* I_DS) – (P_OUT– P_IN).

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

page 1 of 1

Revised February 2005

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与EIC1010-8相关器件

型号	品牌	获取价格	描述	数据表
EIC1010A-12	EXCELICS	获取价格	10.0-10.25 GHz 12-Watt Internally Matched Power FET
EIC1010A-20	EXCELICS	获取价格	10.00-10.25 GHz 20-Watt Internally Matched Power FET
EIC1010A-8	EXCELICS	获取价格	10.00-10.25 GHz 8-Watt Internally Matched Power FET
EIC1011-12	EXCELICS	获取价格	10.7-11.7 GHz 12-Watt Internally Matched Power FET
EIC1011-4	EXCELICS	获取价格	10.70-11.70GHz 4-Watt Internally-Matched Power FET
EIC1011-8	EXCELICS	获取价格	10.70-11.70GHz 8-Watt Internally Matched Power FET
EIC1012-12	EXCELICS	获取价格	10.95-12.75 GHz 12-Watt Internally Matched Power FET
EIC1112-5	EXCELICS	获取价格	11.7-12.7 GHz 5-Watt Internally Matched Power FET
EIC1112-8	EXCELICS	获取价格	11.7-12.7 GHz 8-Watt Internally Matched Power FET
EIC1212-4	EXCELICS	获取价格	12.20-12.70 GHz 4-Watt Internally Matched Power FET

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