是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Transferred | 零件包装代码: | DIP |
包装说明: | 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | 针数: | 32 |
Reach Compliance Code: | compliant | ECCN代码: | 3A991.B.2.A |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.13 |
最长访问时间: | 85 ns | JESD-30 代码: | R-CDIP-T32 |
内存密度: | 2097152 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 32 | 字数: | 262144 words |
字数代码: | 256000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 256KX8 | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装代码: | DIP | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子形式: | THROUGH-HOLE | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 10.16 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
EDI88257C85CI | MICROSEMI |
获取价格 |
Standard SRAM, 256KX8, 85ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88257C85CI | WEDC |
获取价格 |
Standard SRAM, 256KX8, 85ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88257C85CM | MICROSEMI |
获取价格 |
Standard SRAM, 256KX8, 85ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88257C85CM | WEDC |
获取价格 |
Standard SRAM, 256KX8, 85ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88257CA | WEDC |
获取价格 |
256Kx8 Monolithic SRAM | |
EDI88257CA/LPA-C | ETC |
获取价格 |
SRAM | |
EDI88257CA20CB | WEDC |
获取价格 |
Standard SRAM, 256KX8, 20ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88257CA20CC | WEDC |
获取价格 |
Standard SRAM, 256KX8, 20ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88257CA20CI | WEDC |
获取价格 |
Standard SRAM, 256KX8, 20ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88257CA25CB | WEDC |
获取价格 |
Standard SRAM, 256KX8, 25ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 |