是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Transferred | 零件包装代码: | DIP |
包装说明: | 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | 针数: | 32 |
Reach Compliance Code: | compliant | ECCN代码: | 3A001.A.2.C |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.13 |
Is Samacsys: | N | 最长访问时间: | 85 ns |
JESD-30 代码: | R-CDIP-T32 | 内存密度: | 2097152 bit |
内存集成电路类型: | STANDARD SRAM | 内存宽度: | 8 |
功能数量: | 1 | 端子数量: | 32 |
字数: | 262144 words | 字数代码: | 256000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 组织: | 256KX8 |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装代码: | DIP |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | MILITARY | 端子形式: | THROUGH-HOLE |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 10.16 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
EDI88257CA | WEDC |
获取价格 |
256Kx8 Monolithic SRAM | |
EDI88257CA/LPA-C | ETC |
获取价格 |
SRAM | |
EDI88257CA20CB | WEDC |
获取价格 |
Standard SRAM, 256KX8, 20ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88257CA20CC | WEDC |
获取价格 |
Standard SRAM, 256KX8, 20ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88257CA20CI | WEDC |
获取价格 |
Standard SRAM, 256KX8, 20ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88257CA25CB | WEDC |
获取价格 |
Standard SRAM, 256KX8, 25ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88257CA35CB | MICROSEMI |
获取价格 |
Standard SRAM, 256KX8, 35ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88257CA35CC | MICROSEMI |
获取价格 |
Standard SRAM, 256KX8, 35ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88257CA35CI | WEDC |
获取价格 |
Standard SRAM, 256KX8, 35ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 | |
EDI88257CA35CM | MICROSEMI |
获取价格 |
Standard SRAM, 256KX8, 35ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32 |