5秒后页面跳转
EDI88257C85CM PDF预览

EDI88257C85CM

更新时间: 2024-11-02 14:51:03
品牌 Logo 应用领域
美高森美 - MICROSEMI 静态存储器内存集成电路
页数 文件大小 规格书
6页 290K
描述
Standard SRAM, 256KX8, 85ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32

EDI88257C85CM 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Transferred零件包装代码:DIP
包装说明:0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32针数:32
Reach Compliance Code:compliantECCN代码:3A001.A.2.C
HTS代码:8542.32.00.41风险等级:5.13
Is Samacsys:N最长访问时间:85 ns
JESD-30 代码:R-CDIP-T32内存密度:2097152 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:32
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:256KX8
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:DIP
封装形状:RECTANGULAR封装形式:IN-LINE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:NO技术:CMOS
温度等级:MILITARY端子形式:THROUGH-HOLE
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:10.16 mmBase Number Matches:1

EDI88257C85CM 数据手册

 浏览型号EDI88257C85CM的Datasheet PDF文件第2页浏览型号EDI88257C85CM的Datasheet PDF文件第3页浏览型号EDI88257C85CM的Datasheet PDF文件第4页浏览型号EDI88257C85CM的Datasheet PDF文件第5页浏览型号EDI88257C85CM的Datasheet PDF文件第6页 
EDI88257C  
White Electronic Designs  
256Kx8 Monolithic SRAM  
FEATURES  
„
256Kx8 CMOS Static  
The EDI88257C is a 2 Megabit 256Kx8 bit Monolithic  
CMOS Static RAM.  
„
Random Access Memory  
The 32 pin DIP pinout adheres to the JEDEC standard for  
the two megabit device, and is a pin replacement for the  
256Kx8 module, EDI88257C. The device is upgradeable  
to the 512Kx8 SRAM, the EDI88512C. Pin 1 becomes the  
higher order address.  
• Access Times of 70, 85, 100ns  
• Data Retention Function (LP Versions)  
• TTL Compatible Inputs and Outputs  
• Fully Static, No Clocks  
ALow Power version, EDI88257LP, offers a data retention  
function for battery back-up opperation. Military product is  
available compliant to Appendix A of MIL-PRF-38535.  
„
JEDEC Approved Pinout  
• 32 pin Ceramic DIP, 0.6 mils wide (Package 9)  
Single +5V (±10%) Supply Operation  
FIGURE 1 – PIN CONFIGURATION  
32 DIP  
PIN DESCRIPTION  
TOP VIEW  
A0-17  
W#  
Address Inputs  
Write Enable  
NC  
A16  
A14  
A12  
A7  
A6  
A5  
A4  
A3  
1
32 VCC  
31 A15  
30 A17  
29 W#  
28 A13  
27 A8  
E#  
Chip Enable  
2
3
4
5
6
7
8
9
G#  
Output Enable  
Data Inputs/Outputs  
Power (+5V ±10%)  
Ground  
DQ0-7  
VCC  
VSS  
26 A9  
25 A11  
24 G#  
23 A10  
22 E#  
NC  
Not Connected  
A2 10  
A1 11  
BLOCK DIAGRAM  
A0 12  
21 I/O7  
20 I/O6  
19 I/O5  
18 I/O4  
17 I/O3  
DQ0 13  
DQ1 14  
DQ2 15  
VSS 16  
Memory Array  
Address  
Buffer  
Address  
Decoder  
I/O  
Circuits  
A0-17  
DQ0-7  
W#  
E#  
G#  
White Electronic Designs Corp. reserves the right to change products or specications without notice.  
September 1999  
Rev. 2  
1
White Electronic Designs Corporation • (602) 437-1520 •www.whiteedc.com  

与EDI88257C85CM相关器件

型号 品牌 获取价格 描述 数据表
EDI88257CA WEDC

获取价格

256Kx8 Monolithic SRAM
EDI88257CA/LPA-C ETC

获取价格

SRAM
EDI88257CA20CB WEDC

获取价格

Standard SRAM, 256KX8, 20ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32
EDI88257CA20CC WEDC

获取价格

Standard SRAM, 256KX8, 20ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32
EDI88257CA20CI WEDC

获取价格

Standard SRAM, 256KX8, 20ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32
EDI88257CA25CB WEDC

获取价格

Standard SRAM, 256KX8, 25ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32
EDI88257CA35CB MICROSEMI

获取价格

Standard SRAM, 256KX8, 35ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32
EDI88257CA35CC MICROSEMI

获取价格

Standard SRAM, 256KX8, 35ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32
EDI88257CA35CI WEDC

获取价格

Standard SRAM, 256KX8, 35ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32
EDI88257CA35CM MICROSEMI

获取价格

Standard SRAM, 256KX8, 35ns, CMOS, CDIP32, 0.600 INCH, SIDE BRAZED, CERAMIC, DIP-32